Highly improved thermal stability of the ceramic coating layer on the polyethylene separator via chemical crosslinking between ceramic particles and polymeric binders

2022 ◽  
pp. 134501
Author(s):  
Youngjoon Roh ◽  
Dahee Jin ◽  
Eunsae Kim ◽  
Seoungwoo Byun ◽  
Yoon-Sung Lee ◽  
...  
2007 ◽  
Vol 48 (2) ◽  
pp. 127-132 ◽  
Author(s):  
Yongming Wang ◽  
Somei Ohnuki ◽  
Shigenari Hayashi ◽  
Takayuki Yoshioka ◽  
Motoi Hara ◽  
...  

Materials ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 3742
Author(s):  
Xiaozhou Xu ◽  
Yi Liu ◽  
Bangwei Lan ◽  
Song Mo ◽  
Lei Zhai ◽  
...  

A series of 4-phenylethnylphthalic anhydride (PEPA)-terminated oligoimides were prepared by co-oligomerizing isomeric dianhydrides, i.e., 2,3,3′,4′-biphenyltetracarboxylic dianhydride (a-BPDA), 2,3,3′,4′-benzophenonetetracarboxylic dianhydride (a-BTDA) or 2,3,3′,4′-diphenylethertetracarboxylic dianhydride (a-ODPA), with diamines mixture of bis(4-aminophenoxy)dimethyl silane (APDS) and 2,2′-bis(trifluoromethyl) benzidine (TFDB). The effects of siloxane content and dianhydride structure on the rheological properties of these oligoimides and thermal stability of the corresponding cured polyimide resins were investigated. The results indicated that the introduction of the siloxane structure improved the melt processability of the oligoimides, while the thermal stability of the cured polyimide resins reduced. The oligoimide derived from a-ODPA revealed better melt processability and melt stability due to the existence of a flexible dianhydride structure. The oligoimide PIS-O10 derived from a-ODPA gave the lowest minimum melt viscosity of 0.09 Pa·s at 333 °C and showed the excellent melt stability at 260 °C for 2 h with the melt viscosity in the range of 0.69–1.63 Pa·s. It is also noted that the thermal stability of these resins can be further enhanced by postcuring at 400–450 °C, which is attributed to the almost complete chemical crosslinking of the phenyethynyl combined with oxidative crosslinking of siloxane. The PIS-T10 and PIS-O10 resins that were based on a-BTDA and a-ODPA, respectively, even showed a glass transition temperature over 550 °C after postcuring at 450 °C for 1 h.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

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