Robust SiO2 gate dielectric thin films prepared through plasma-enhanced atomic layer deposition involving di-sopropylamino silane (DIPAS) and oxygen plasma: Application to amorphous oxide thin film transistors

2018 ◽  
Vol 44 (2) ◽  
pp. 1556-1565 ◽  
Author(s):  
Yoo-Jin Choi ◽  
Seung-Muk Bae ◽  
Jae-Hwan Kim ◽  
Eui-Hyun Kim ◽  
Hee-Soo Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Oxygen Plasma ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Dielectric Thin Films ◽  
Layer Deposition

scholarly journals Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Reliability Enhancement ◽  
Active Channels

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

Low-Temperature-Processed Zinc Oxide Thin-Film Transistors Fabricated by Plasma-Assisted Atomic Layer Deposition

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BF04 ◽  
Author(s):  
Yumi Kawamura ◽  
Mai Tani ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Masahiro Horita ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Layer Deposition
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