Automatic etch pit density analysis in multicrystalline silicon

Double and triple crystal rocking curve and peak position maps are constructed for a 4HSiC wafer for the symmetric (0 0 0 8) reflection in the normal position, the same reflection for a sample rotated 90º, and an asymmetric (1 23 6) reflection for the wafer in the normal position. These measurements were corrected for the ‘wobble’ in the instrument by scanning a 4” (1 1 1) Si wafer and assuming that the Si wafer was perfect and attributing the variations in the measurements to instrumental error. The x-ray measurements are correlated with a cross polar image, etch pit density map, white beam transmission x-ray topograph, and a laser light scan.

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Machine Learning for Automated Etch Pit Counting on As-sliced Surface of Multicrystalline Silicon

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8547392 ◽

2018 ◽

Author(s):

Takuto Kojima ◽

Kohei Onishi ◽

Atsushi Ogura ◽

Kenji Fukui ◽

Manabu Komoda ◽

...

Keyword(s):

Machine Learning ◽

Multicrystalline Silicon ◽

Etch Pit

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Creep of CdZnTe at high homologous temperatures

Journal of Materials Research ◽

10.1557/jmr.1999.0522 ◽

1999 ◽

Vol 14 (10) ◽

pp. 3864-3869 ◽

Cited By ~ 2

Author(s):

T. E. Stevens ◽

J. C. Moosbrugger ◽

F. M. Carlson

Keyword(s):

Elevated Temperatures ◽

Small Strain ◽

Small Sample ◽

Dislocation Creep ◽

Etch Pit Density ◽

Self Diffusion ◽

Etch Pit ◽

Before And After ◽

Low Levels ◽

Different Sources

The creep behavior of single-crystal Zn-doped CdTe was examined in the small strain regime. Specimens from two different sources, with tensile axes [110] and [112], were deformed at 1073 and 1173 K. Strain rates were of order 10−6 to 10−7 s−1. A laser interferometer was constructed to measure the small sample displacement. Cadmium overpressure was used to inhibit sublimation of test specimens at elevated temperatures. Some tests showed a transition from secondary to tertiary creep at low levels of strain. An activation energy for steady-state creep was calculated as QC = 1.46 eV, and the creep exponent was found to be approximately n = 4.2. These results, coupled with reported activation energies for self-diffusion of Cd in Cd(Zn)Te, indicate a dislocation creep mechanism. Etch pit density was measured before and after deformation and approached a common level regardless of initial etch pit density.

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Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF3 Gas

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.379 ◽

2012 ◽

Vol 717-720 ◽

pp. 379-382 ◽

Cited By ~ 6

Author(s):

Hitoshi Habuka ◽

Kazuchika Furukawa ◽

Toshimitsu Kanai ◽

Tomohisa Kato

Keyword(s):

Substrate Temperature ◽

Crystal Quality ◽

Etch Pit Density ◽

Etch Pits ◽

Etch Pit ◽

And Behavior

The etch pit density produced on the C-face 4H-SiC substrate using chlorine trifluoride gas at various temperatures was evaluated. Because the etch pit density formed at the substrate temperature of 713 K showed the comparable value to the current dislocation level of the Si-face 4H-SiC, the etch pit density obtained by this technique is considered to have a relationship with the crystal quality.

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Correlation between etch pit density and performance in surface barrier nuclear detectors

Nuclear Instruments and Methods ◽

10.1016/0029-554x(72)90105-x ◽

1972 ◽

Vol 98 (2) ◽

pp. 255-257 ◽

Cited By ~ 1

Author(s):

H. Chisaka ◽

M. Masuda

Keyword(s):

Surface Barrier ◽

Etch Pit Density ◽

Etch Pit ◽

And Performance ◽

Nuclear Detectors

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Surface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nano-patterned sapphire substrates by metalorganic chemical vapor deposition

Applied Surface Science ◽

10.1016/j.apsusc.2018.06.017 ◽

2018 ◽

Vol 455 ◽

pp. 1123-1130 ◽

Cited By ~ 7

Author(s):

Tzu-Yu Wang ◽

Chi-Tsung Tasi ◽

Ku-Yen Lin ◽

Sin-Liang Ou ◽

Ray-Hua Horng ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Etch Pit Density ◽

Surface Evolution ◽

Sapphire Substrates ◽

Etch Pit ◽

Metalorganic Chemical ◽

Patterned Sapphire Substrates

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Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

Applied Physics Letters ◽

10.1063/1.4984900 ◽

2017 ◽

Vol 110 (23) ◽

pp. 232102 ◽

Cited By ~ 5

Author(s):

D. D. Koleske ◽

J. J. Figiel ◽

D. L. Alliman ◽

B. P. Gunning ◽

J. M. Kempisty ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Etch Pit Density ◽

Etch Pit

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Reduction of Dislocations in the Bulk Growth of SiC Crystals

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.3 ◽

2006 ◽

Vol 527-529 ◽

pp. 3-8 ◽

Cited By ~ 8

Author(s):

Daisuke Nakamura

Keyword(s):

Dislocation Density ◽

Growth Process ◽

Large Diameter ◽

Device Performance ◽

Etch Pit Density ◽

Bulk Growth ◽

Etch Pit ◽

Low Dislocation Density ◽

The Impact

Recent reports on the impact of elementary dislocations on device performance and reliability suggest not only micropipe defects but also dislocations should be reduced or eliminated perfectly. This paper presents bulk growth process for reduction of the dislocations, and quality of the crystals grown by the process. Etch pit density of the best crystals grown by the process was lower by three orders of magnitude than that of conventional crystals. Moreover, large diameter crystals (>2”) with low dislocation density were successfully grown by the process.

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