Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps

Double and triple crystal rocking curve and peak position maps are constructed for a 4HSiC wafer for the symmetric (0 0 0 8) reflection in the normal position, the same reflection for a sample rotated 90º, and an asymmetric (1 23 6) reflection for the wafer in the normal position. These measurements were corrected for the ‘wobble’ in the instrument by scanning a 4” (1 1 1) Si wafer and assuming that the Si wafer was perfect and attributing the variations in the measurements to instrumental error. The x-ray measurements are correlated with a cross polar image, etch pit density map, white beam transmission x-ray topograph, and a laser light scan.

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Rapid Structural Defect Mapping of Bulk II-VI Semiconductors Using White-Beam Synchrotron Topography and X-ray Rocking Curve Analysis

MRS Proceedings ◽

10.1557/proc-262-215 ◽

1992 ◽

Vol 262 ◽

Cited By ~ 3

Author(s):

Don Di Marzio ◽

Louis G. Casagrande ◽

Myung B. Lee ◽

Thomas Fanning ◽

Michael Dudley

Keyword(s):

Semiconductor Industry ◽

Defect Analysis ◽

Etch Pit Density ◽

Ir Detector ◽

Rocking Curve ◽

X Ray ◽

Etch Pit ◽

White Beam ◽

Device Structures ◽

Nondestructive Characterization

ABSTRACTNondestructive characterization techniques for substrates, epilayers, and device structures are becoming increasingly important in the semiconductor industry. Synchrotron-based white-beam x-ray topography, x-ray rocking curve measurements, and etch pit density were used to map the defect structure in a variety of CdTe and CdZnTe single crystal substrates, which are important for IR detector applications involving HgCdTe. Defects such as low angle grain boundaries have been successfully correlated using topography, rocking curves, and etch pit density, and twins have been observed using topography and rocking curves. The effectiveness of white-beam synchrotron topography for rapid and nondestructive defect analysis and substrate screening is discussed.

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Si wafers having one- and two-dimensionally curved (111) planes examined by X-ray diffraction

Journal of Applied Crystallography ◽

10.1107/s0021889806011939 ◽

2006 ◽

Vol 39 (3) ◽

pp. 443-445 ◽

Cited By ~ 7

Author(s):

Hiroshi Okuda ◽

Kazuo Nakajima ◽

Kozo Fujiwara ◽

Shojiro Ochiai

Keyword(s):

Elevated Temperatures ◽

Peak Position ◽

Curved Surface ◽

Lattice Plane ◽

X Ray Diffraction ◽

Diffraction Scattering ◽

X Ray ◽

Si Wafer

Si (111) wafers deformed at elevated temperatures into cylindrical or hemispherical shapes have been examined by X-ray diffraction. Well defined 333 peaks shifted with in-plane distance from the centre of the wafer as determined by ω scans. The shift of the peak position agreed with the curvature of the Si wafer, suggesting that the Si (111) lattice plane can be designed on an arbitrarily curved surface by this method. These crystals have potential for innovative applications in X-ray instrumentation, for both diffraction/scattering and spectroscopy.

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Large-surface-area diamond (111) crystal plates for applications in high-heat-load wavefront-preserving X-ray crystal optics

Journal of Synchrotron Radiation ◽

10.1107/s1600577516011796 ◽

2016 ◽

Vol 23 (5) ◽

pp. 1118-1123 ◽

Cited By ~ 9

Author(s):

Stanislav Stoupin ◽

Sergey Antipov ◽

James E. Butler ◽

Alexander V. Kolyadin ◽

Andrey Katrusha

Keyword(s):

Surface Area ◽

Heat Load ◽

Crystal Surface ◽

High Heat ◽

Peak Position ◽

Large Surface Area ◽

Crystal Optics ◽

Rocking Curve ◽

X Ray ◽

High Heat Load

Fabrication and results of high-resolution X-ray topography characterization of diamond single-crystal plates with large surface area (10 mm × 10 mm) and (111) crystal surface orientation for applications in high-heat-load X-ray crystal optics are reported. The plates were fabricated by laser-cutting of the (111) facets of diamond crystals grown using high-pressure high-temperature methods. The intrinsic crystal quality of a selected 3 mm × 7 mm crystal region of one of the studied samples was found to be suitable for applications in wavefront-preserving high-heat-load crystal optics. Wavefront characterization was performed using sequential X-ray diffraction topography in the pseudo plane wave configuration and data analysis using rocking-curve topography. The variations of the rocking-curve width and peak position measured with a spatial resolution of 13 µm × 13 µm over the selected region were found to be less than 1 µrad.

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Low-signature Cadmium Zinc Telluride CZT defect inspection by IR, ultrasound, etch pit density, and x-ray topography

IEEE Nuclear Science Symposuim & Medical Imaging Conference ◽

10.1109/nssmic.2010.5874497 ◽

2010 ◽

Author(s):

K Andreini ◽

J E Tkaczyk ◽

Tan Zhang ◽

Y Z Williams ◽

C Nafis ◽

...

Keyword(s):

Cadmium Zinc Telluride ◽

Zinc Telluride ◽

Etch Pit Density ◽

Defect Inspection ◽

X Ray ◽

Etch Pit ◽

Cadmium Zinc

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X-Ray, Photoluminescence and Etching Studies of Indium-Doped LPE GaAs Layers

MRS Proceedings ◽

10.1557/proc-144-9 ◽

1988 ◽

Vol 144 ◽

Author(s):

J.F. Chen ◽

C. R. Wie ◽

F. A. Junga

Keyword(s):

Phase Diagram ◽

Sharp Increase ◽

Emission Spectra ◽

Etch Pit Density ◽

Double Crystal ◽

X Ray ◽

Etch Pit ◽

In Doping ◽

Good Crystalline Quality ◽

Pseudobinary Phase Diagram

ABSTRACTThe effects of In doping on the structural properties of liquid phase epitaxially (LPE) grown GaAs layers are studied. The distribution coefficient of In in the GaAs at 800 ° C was determined to be 0.033 which was consistent with the value calculated from the pseudobinary phase diagram of the ternary system at a dilute In concentration. The full widths at halfmaximum (FWHM) of x-ray double crystal rocking curves show that a GaAs epi-layer of good crystalline quality can be obtained by doping In to a concentration up to 4.3 × 1019 cm−3, beyond which a sharp increase in the FWHM is observed. Etch pit density (EPD) measurement shows that the dislocation density is reduced by doping the epi-layer with In. At the optimal In concentration of 2.4 × 1019 cm−3, the EPD is reduced by a factor of 20 when measured at the surface of a 9 um thick epilayer.Photoluminesce measurements made at 15 K show two sharp emission spectra near the bandedge. The relative intensities of the two emissions, I(l.49eV)/I(l.5eV) are reduced with increasing In content. This suggests that incorporation of Carbon acceptors is suppressed by In doping in the GaAs epilayers. The FWHM as small as 5 meV of the bandedge transition was obtained for the epi-layer doped with In concentration of 2.4 × 1019 cm−3.

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Rocking-Curve Peak Shift in Thin Heterojunction Single Layers

MRS Proceedings ◽

10.1557/proc-145-487 ◽

1989 ◽

Vol 145 ◽

Author(s):

C.R. Wie ◽

Y-W. Choi ◽

H.M. Kim ◽

J.F. Chen ◽

T. Vreeland ◽

...

Keyword(s):

Thin Layer ◽

Thick Layer ◽

Diffraction Theory ◽

Peak Shift ◽

Peak Position ◽

Thin Layers ◽

Simple Method ◽

Rocking Curve ◽

X Ray ◽

Layer Peak

AbstractA simple method for determining layer composition and mismatch of semiconductor hetero-epitaxial samples is by measuring the separation of peaks in x-ray rocking curve (XRC). This method fails if the peak separation is affected by other factors. For a small layer thickness, the layer peak position is affected by the x-ray amplitudes of the substrate or other thicker layers through the interference and overlap effects. In this case, a diffraction theory fitting process is necessary for a correct determination of layer parameters. We have used dynamical and kinematical x-ray diffraction theories to calculate the layer peak position as a function of its thickness for various layer/substrate combinations. These two theories yield substantially different results, indicating that the kinematical diffraction theory analysis is no longer valid for these thin layers. When a thick layer is present along with the thin layer, the thick layer is more influential than the substrate to the thin layer peak position, making the dynamical theory fitting necessary even from higher thickness.

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Growth of Boron Carbide Crystals from a Copper Flux

MRS Proceedings ◽

10.1557/proc-1164-l06-02 ◽

2009 ◽

Vol 1164 ◽

Author(s):

Yi Zhang ◽

James Edgar ◽

Jack Plummer ◽

Clinton Whiteley ◽

Hui Chen ◽

...

Keyword(s):

Boron Carbide ◽

Potassium Hydroxide ◽

Crystal Size ◽

Optical Microscope ◽

Etch Pit Density ◽

Bulk Crystals ◽

Limited Growth ◽

Etch Pits ◽

X Ray ◽

Etch Pit

AbstractBoron carbide crystals ranging in size from 50 microns to several millimeters have been grown from a copper-boron carbide flux at temperatures from 1500°C to 1750°C. The crystal size increased with growth temperature although copper evaporation limited growth at the higher temperatures. Synchrotron X-ray Laue patterns were indexed according to (001) orientation boron carbide structure, indicating the bulk crystals were single crystalline with {001} growth facets. Raman spectrum of boron carbide indicates an improved crystal quality compared to the source powder, but peaks of crystals grown from 11B -enriched source shifted to the lower energy by 1-4 cm−1 from literature values, possibly due to the boron isotope dependency. Five fold symmetry defects and twin planes were common as observed by optical microscope and scanning electron microscope. Raindrop shape etch pits were formed after defect selective etching in molten potassium hydroxide at 600°C for 6 minutes. Typically, the etch pit density was on the order of 106/cm2.

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A study of etch pit density and x-ray rocking curves for GaAs substrate evaluation

Journal of Electronic Materials ◽

10.1007/bf02670882 ◽

1991 ◽

Vol 20 (5) ◽

pp. 345-352 ◽

Cited By ~ 1

Author(s):

J. M. Tartaglia ◽

S. M. Crochiere ◽

C. E. Kalnas ◽

D. L. Farrington ◽

J. A. Kronwasser ◽

...

Keyword(s):

Gaas Substrate ◽

Etch Pit Density ◽

X Ray ◽

Etch Pit

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Resolution of X-Ray Rocking Curve Measurements Made with Finite Counting Statistics

International Journal of High Speed Electronics and Systems ◽

10.1142/s012915641550007x ◽

2015 ◽

Vol 24 (03n04) ◽

pp. 1550007 ◽

Cited By ~ 3

Author(s):

Tedi Kujofsa ◽

John E. Ayers

Keyword(s):

Peak Position ◽

Bragg Angle ◽

Full Width ◽

Half Maximum ◽

Peak Width ◽

Effective Number ◽

Rocking Curve ◽

X Ray ◽

Experimental Resolution ◽

Counting Statistics

We have analyzed the strain resolution of x-ray rocking curve profiles from measurements of the peak position and peak width made with finite counting statistics. In this work, we have considered x-ray rocking curves which may be Gaussian or Lorentzian in character and have analyzed the influence of the effective number of counts, full-width-at-half-maximum (FWHM) and the Bragg angle on the resolution. Often experimental resolution values are estimated on the order of 10−5 whereas this work predicts more sensitive values (10−9) with smaller FWHM and larger effective counts and Bragg angles.

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