Erratum to “Recent advances in high-growth rate single-crystal CVD diamond” [Diamond Relat. Mater. 18 (2009) 698–703]

2009 ◽  
Vol 18 (10) ◽  
pp. 1332 ◽  
Author(s):  
Qi Liang ◽  
Chih-shiue Yan ◽  
Yufei Meng ◽  
Joseph Lai ◽  
Szczesny Krasnicki ◽  
...  
2009 ◽  
Vol 18 (5-8) ◽  
pp. 698-703 ◽  
Author(s):  
Qi Liang ◽  
Chih-shiue Yan ◽  
Yufei Meng ◽  
Joseph Lai ◽  
Szczesny Krasnicki ◽  
...  

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability


2016 ◽  
Vol 858 ◽  
pp. 1210-1213 ◽  
Author(s):  
Shota Watanabe ◽  
Masashi Nagaya ◽  
Yukihisa Takeuchi ◽  
Kenta Aoyagi ◽  
S. Harada ◽  
...  

We achieved a high growth rate in solution growth of AlN single crystal by suppressing unintentional precipitations near the surface of solvent and by increasing the equilibrium nitrogen concentration in the solvent. In order to suppress unintentional precipitations, we made the solvent supersaturated just above the surface of the substrate by optimizing the composition of the solvent and the temperature distribution based on thermodynamic numerical analysis. In particular, we focused on interactions between nitrogen or aluminum and solvent elements, leading to the increase of the equilibrium nitrogen concentration. We selected chromium and cobalt due to their high affinity with nitrogen or aluminum. Consequently, we successfuly achieved growth rate as high as 200 μm/h in maximum.


Crystals ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 32 ◽  
Author(s):  
Hao Liu ◽  
Jia-jun Li ◽  
Zhen-rui Li ◽  
Kai Xu ◽  
Zheng-jia Chen ◽  
...  

Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality.


1994 ◽  
Author(s):  
Tom A. McKenna ◽  
James T. Hoggins ◽  
John M. Trombetta ◽  
Paul Klocek ◽  
Charles E. Vaughan

2002 ◽  
Vol 235 (1-4) ◽  
pp. 287-292 ◽  
Author(s):  
Tokuyuki Teraji ◽  
Satoshi Mitani ◽  
Chunlei Wang ◽  
Toshimichi Ito

2004 ◽  
Vol 13 (4-8) ◽  
pp. 557-560 ◽  
Author(s):  
Oliver A. Williams ◽  
Richard B. Jackman

Sign in / Sign up

Export Citation Format

Share Document