High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent

2016 ◽  
Vol 858 ◽  
pp. 1210-1213 ◽  
Author(s):  
Shota Watanabe ◽  
Masashi Nagaya ◽  
Yukihisa Takeuchi ◽  
Kenta Aoyagi ◽  
S. Harada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Temperature Distribution ◽  
Numerical Analysis ◽  
Single Crystal ◽  
High Speed ◽  
Nitrogen Concentration ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
High Affinity

We achieved a high growth rate in solution growth of AlN single crystal by suppressing unintentional precipitations near the surface of solvent and by increasing the equilibrium nitrogen concentration in the solvent. In order to suppress unintentional precipitations, we made the solvent supersaturated just above the surface of the substrate by optimizing the composition of the solvent and the temperature distribution based on thermodynamic numerical analysis. In particular, we focused on interactions between nitrogen or aluminum and solvent elements, leading to the increase of the equilibrium nitrogen concentration. We selected chromium and cobalt due to their high affinity with nitrogen or aluminum. Consequently, we successfuly achieved growth rate as high as 200 μm/h in maximum.

Growth of Large Diameter 4H-SiC by TSSG Technique

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  
Keyword(s):  
Growth Rate ◽  
Fluid Flow ◽  
Single Crystal ◽  
Large Diameter ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Morphological Stability ◽  
Control Member ◽  
Top Seeded Solution Growth

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability

Solution Growth of Single Crystalline 6H-SiC from Si-Ti-C Ternary Solution

2007 ◽  
Vol 352 ◽  
pp. 89-94 ◽  
Author(s):  
Kenji Suzuki ◽  
Kazuhiko Kusunoki ◽  
Nobuyoshi Yashiro ◽  
Nobuhiro Okada ◽  
Kazuhito Kamei ◽  
...  
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
High Growth ◽  
Graphite Crucible ◽  
High Growth Rate ◽  
Solution Growth ◽  
Ternary Solution ◽  
X Ray Diffraction ◽  
Growth Interface ◽  
X Ray

Solution growth of 6H-SiC single crystal from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT) was performed. The SiC growth rate exceeding 200 μm/hr was achieved in several ACRT conditions. Such a high growth rate can be ascribed to the enhancement of the carbon transport from the graphite crucible to the growth interface due to the use of the ACRT. The incorporation of inclusions of Si-Ti solvent in the grown SiC crystal was also significantly suppressed by using the ACRT. The intensive convection near the growth interface induced by the ACRT resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology. It was concluded that faster stable growth could be accomplished in the SiC solution growth using the ACRT. The obtained SiC self-standing crystal exhibited homogeneous green colour without cracks and inclusions. We investigated the crystalline quality of the grown SiC crystal by means of X-ray diffraction. The, ω-scan rocking curves of (0006) reflection measured by X-ray diffraction provided the FWHM of 15-20 arc-second showing the excellent crystallinity of the solution grown 6H-SiC single crystal.

Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N2 Flow Rate under High Growth Rate Condition

2019 ◽  
Vol 963 ◽  
pp. 97-100
Author(s):  
Yoshiaki Daigo ◽  
Akio Ishiguro ◽  
Shigeaki Ishii ◽  
Takehiko Kobayashi
Keyword(s):  
Growth Rate ◽  
Carrier Concentration ◽  
Flow Rate ◽  
High Speed ◽  
High Growth ◽  
High Growth Rate ◽  
Average Growth ◽  
Rate Condition ◽  
Continuous Growth ◽  
Drift Layer

N-type 4H-SiC homo-epitaxial films were grown under high growth rate condition by high speed wafer rotation vertical CVD tool, and dependence on N2 flow rate for in-wafer distribution of thickness and carrier concentration was investigated. By adjusting only the N2 flow rate from 0.33 to 130 sccm, average carrier concentration of the SiC film was controlled within a range from 3 x 1015 to 1 x 1018 cm-3, while maintaining good in-wafer uniformity less than ±7.0%. Average growth rate higher than 54 μm/h and in-wafer uniformity less than ±3.1% were maintained and no dependence for thickness distribution on N2 flow rate was observed. Buffer/drift epitaxial stack using quick change of N2 flow rate was fabricated, and the crystalline quality and steepness of N concentration at buffer/drift interface were also investigated. The epitaxial stack showed lower defect density compared with single drift layer and showed steep interface between buffer layer and drift layer.

scholarly journals Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate

Crystals ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 32 ◽  
Author(s):  
Hao Liu ◽  
Jia-jun Li ◽  
Zhen-rui Li ◽  
Kai Xu ◽  
Zheng-jia Chen ◽  
...  
Keyword(s):  
Growth Rate ◽  
Radio Frequency ◽  
Single Crystal ◽  
Emission Spectra ◽  
High Growth ◽  
Optical Emission ◽  
Plasma Jet ◽  
Methane Flux ◽  
High Growth Rate ◽  
Single Crystal Diamond

Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality.

Developing Technologies of SiC Gas Source Growth Method

2016 ◽  
Vol 858 ◽  
pp. 23-28 ◽  
Author(s):  
Jun Kojima ◽  
Yuichiro Tokuda ◽  
Emi Makino ◽  
Naohiro Sugiyama ◽  
Norihiro Hoshino ◽  
...  
Keyword(s):  
Growth Rate ◽  
Mass Production ◽  
High Speed ◽  
High Growth ◽  
Maximum Growth ◽  
High Growth Rate ◽  
Average Growth ◽  
Gas Source ◽  
Growth Method ◽  
Production Technologies

In order to diffuse the use of SiC, mass-production technologies of SiC wafers are needed. It is easy to be understood that high-speed and long-sized growth technologies are connected directly with mass-production technologies. The gas source growth method such as HT-CVD has the possibilities and the potential of the high-speed and long-sized growth. In this article, it was clarified that the high growth rate were achieved by the control of the source gas partial pressures and by the gas boundary layers. The average growth rate was 1mm/h on the f4 inch-diameter crystal, and the maximum growth rate reached 3.6 mm/h on the 12.5x25 mm tetragon by the above gas control. The crystal qualities of the gas source methods were also evaluated the equivalent level in comparison with the sublimation method. Concerning the 1mm/h-growth f3 inch crystal, the densities of TSDs were kept in the 102 cm-2 levels from the seed to the upper-side of the ingot. Moreover, the ingot size increased year by year and a f4 inch x 43 mm sized ingot has been developed.

Erratum to “Recent advances in high-growth rate single-crystal CVD diamond” [Diamond Relat. Mater. 18 (2009) 698–703]

2009 ◽  
Vol 18 (10) ◽  
pp. 1332 ◽  
Author(s):  
Qi Liang ◽  
Chih-shiue Yan ◽  
Yufei Meng ◽  
Joseph Lai ◽  
Szczesny Krasnicki ◽  
...  
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
High Growth ◽  
Cvd Diamond ◽  
High Growth Rate ◽  
Recent Advances

Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity

2014 ◽  
Vol 778-780 ◽  
pp. 75-78 ◽  
Author(s):  
Takayuki Shirai ◽  
Katsunori Danno ◽  
Akinori Seki ◽  
Hidemitsu Sakamoto ◽  
Takeshi Bessho
Keyword(s):  
Growth Rate ◽  
Flat Surface ◽  
Low Cost ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Bulk Crystals ◽  
Low Resistivity ◽  
Al Content ◽  
P Type

P-type 4H-SiC bulk crystals have been grown at a high growth rate of 1.0 mm/h by solution growth using Si-Cr-Al based melt. The crystals grown from solution with an Al content of 10at% show low resistivity of 35 mcm, which is two orders of magnitude lower than commercialwafers (Resistivity: 2500 mcm). The low-resistivity crystals have flat surface and few solvent inclusions. These results indicate that solution growth is a suitable method for fabricating low-resistivity p-type substrates with low cost.

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