Complicated Macroscopic Growth of KCl Single Crystal Effected by High Growth-Rate Direction

1976 ◽  
Vol 15 (2) ◽  
pp. 243-247 ◽  
Author(s):  
Tetsuro Nakatao ◽  
Yasuo Ohta
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
High Growth ◽  
High Growth Rate

Growth of Large Diameter 4H-SiC by TSSG Technique

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  
Keyword(s):  
Growth Rate ◽  
Fluid Flow ◽  
Single Crystal ◽  
Large Diameter ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Morphological Stability ◽  
Control Member ◽  
Top Seeded Solution Growth

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability

High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent

2016 ◽  
Vol 858 ◽  
pp. 1210-1213 ◽  
Author(s):  
Shota Watanabe ◽  
Masashi Nagaya ◽  
Yukihisa Takeuchi ◽  
Kenta Aoyagi ◽  
S. Harada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Temperature Distribution ◽  
Numerical Analysis ◽  
Single Crystal ◽  
High Speed ◽  
Nitrogen Concentration ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
High Affinity

We achieved a high growth rate in solution growth of AlN single crystal by suppressing unintentional precipitations near the surface of solvent and by increasing the equilibrium nitrogen concentration in the solvent. In order to suppress unintentional precipitations, we made the solvent supersaturated just above the surface of the substrate by optimizing the composition of the solvent and the temperature distribution based on thermodynamic numerical analysis. In particular, we focused on interactions between nitrogen or aluminum and solvent elements, leading to the increase of the equilibrium nitrogen concentration. We selected chromium and cobalt due to their high affinity with nitrogen or aluminum. Consequently, we successfuly achieved growth rate as high as 200 μm/h in maximum.

scholarly journals Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate

Crystals ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 32 ◽  
Author(s):  
Hao Liu ◽  
Jia-jun Li ◽  
Zhen-rui Li ◽  
Kai Xu ◽  
Zheng-jia Chen ◽  
...  
Keyword(s):  
Growth Rate ◽  
Radio Frequency ◽  
Single Crystal ◽  
Emission Spectra ◽  
High Growth ◽  
Optical Emission ◽  
Plasma Jet ◽  
Methane Flux ◽  
High Growth Rate ◽  
Single Crystal Diamond

Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality.

Erratum to “Recent advances in high-growth rate single-crystal CVD diamond” [Diamond Relat. Mater. 18 (2009) 698–703]

2009 ◽  
Vol 18 (10) ◽  
pp. 1332 ◽  
Author(s):  
Qi Liang ◽  
Chih-shiue Yan ◽  
Yufei Meng ◽  
Joseph Lai ◽  
Szczesny Krasnicki ◽  
...  
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
High Growth ◽  
Cvd Diamond ◽  
High Growth Rate ◽  
Recent Advances

Recent advances in high-growth rate single-crystal CVD diamond

2009 ◽  
Vol 18 (5-8) ◽  
pp. 698-703 ◽  
Author(s):  
Qi Liang ◽  
Chih-shiue Yan ◽  
Yufei Meng ◽  
Joseph Lai ◽  
Szczesny Krasnicki ◽  
...  
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
High Growth ◽  
Cvd Diamond ◽  
High Growth Rate ◽  
Recent Advances

High growth rate MWPECVD of single crystal diamond

2004 ◽  
Vol 13 (4-8) ◽  
pp. 557-560 ◽  
Author(s):  
Oliver A. Williams ◽  
Richard B. Jackman
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
High Growth ◽  
High Growth Rate ◽  
Single Crystal Diamond

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

2013 ◽  
Vol 740-742 ◽  
pp. 23-26 ◽  
Author(s):  
Naoyoshi Komatsu ◽  
Takeshi Mitani ◽  
Tetsuo Takahashi ◽  
Masayuki Okamura ◽  
Tomohisa Kato ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Single Crystal ◽  
Growth Temperature ◽  
Crystallization Front ◽  
Stable Solution ◽  
High Growth ◽  
High Growth Rate ◽  
Solute Element ◽  
Adequate Condition

We have investigated growth rate and surface morphology of 4H-SiC single crystal grown from Si-C solution with various supersaturation levels at growth temperature in the range from 1840 to 2140 °C. The growth rate depends linearly on the amount of supersaturated carbon, irrespective of the growth temperature. This indicates that the growth is limited by the transfer of solute element onto the crystallization front. The adequate condition for stable solution growth are discussed with respect to high growth rate and surface morphology.

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