Growth of high-quality homoepitaxial CVD diamond films at high growth rate

The development of homoepitaxial films for advanced device applications has been studied, but high growth rate and diamond film quality have not yet been explored. In the current study, high quality homoepitaxial diamond films were grown on type Ib (100) HPHT synthetic diamond substrate by hot-filament chemical vapor deposition. The reactant gases were mixed by CH4 and H2 with small amounts of N2 (500 to 3000 ppm). Besides, a bias system was used to assist diamond film deposition. The pyramidal crystals on diamond surface can be suppressed and high quality diamond film of FWHM (Full Width at Half Maximum) = 10.76 cm-1 with high growth rate of 8.78 ± 0.2 μm/ hr was obtained at the condition of adding 1000 ppm nitrogen. At the bias voltage of -150 V, the pyramidal crystals can also be suppressed and high quality diamond film of FWHM = 10.19 cm-1 was obtained. With nitrogen addition above 2000 ppm, diamond film was partly doped and some sp2 structures appeared. These homoepitaxial diamond films were characterized by optical microscopy and micro-Raman spectroscopy.

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Investigation of homoepitaxial growth by microwave plasma CVD providing high growth rate and high quality of diamond simultaneously

Materials Today Communications ◽

10.1016/j.mtcomm.2019.100816 ◽

2020 ◽

Vol 22 ◽

pp. 100816 ◽

Cited By ~ 2

Author(s):

A.L. Vikharev ◽

M.A. Lobaev ◽

A.M. Gorbachev ◽

D.B. Radishev ◽

V.A. Isaev ◽

...

Keyword(s):

Growth Rate ◽

Microwave Plasma ◽

High Growth ◽

High Growth Rate ◽

Plasma Cvd ◽

High Quality ◽

Homoepitaxial Growth ◽

Microwave Plasma Cvd

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Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet

Diamond and Related Materials ◽

10.1016/s0925-9635(00)00289-2 ◽

2000 ◽

Vol 9 (9-10) ◽

pp. 1673-1677 ◽

Cited By ~ 7

Author(s):

H. Guo ◽

Z.L. Sun ◽

Q.Y. He ◽

S.M. Du ◽

X.B. Wu ◽

...

Keyword(s):

Growth Rate ◽

High Growth ◽

Plasma Jet ◽

High Growth Rate ◽

Arc Plasma ◽

Large Area ◽

High Quality ◽

Dc Arc

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Morphology of Diamond Films Grown by DC Plasma Jet CVD

MRS Proceedings ◽

10.1557/proc-162-115 ◽

1989 ◽

Vol 162 ◽

Cited By ~ 3

Author(s):

Kazuaki Kurihara ◽

Ken-Ichi Sasaki ◽

Motonobu Kawarada ◽

Nagaaki Koshino

Keyword(s):

Growth Rate ◽

Microwave Plasma ◽

Diamond Films ◽

High Growth ◽

Plasma Jet ◽

High Growth Rate ◽

Plasma Cvd ◽

Dc Plasma ◽

Synthesis Conditions ◽

Microwave Plasma Cvd

ABSTRACTIt is well known that diamond films synthesized from the gas phase have well defined crystal habits which are affected strongly by synthesis conditions. Though there have been many studies of the morphologies of diamond films synthesized by microwave plasma CVD [1,2,3], there have been relatively few reports on the morphologies of these films grown using new high growth rate techniques such as DC plasma jet CVD [4]. Morphology control is very important to keep flat surface, when producing thick diamond films by high growth rate techniques. In this paper we report our investigation of the morphology and growth of diamond films synthesized by DC plasma jet CVD.

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Growth of high quality AlN/sapphire templates with high growth rate using a medium-temperature layer

Superlattices and Microstructures ◽

10.1016/j.spmi.2018.12.008 ◽

2019 ◽

Vol 125 ◽

pp. 343-347 ◽

Cited By ~ 1

Author(s):

Hualong Wu ◽

Wei Zhao ◽

Chenguang He ◽

Kang Zhang ◽

Longfei He ◽

...

Keyword(s):

Growth Rate ◽

High Growth ◽

High Growth Rate ◽

High Quality ◽

Medium Temperature

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High quality large-area graphene synthesis with high growth rate using plasma-enhanced CVD

Synthesiology ◽

10.5571/synth.9.3_124 ◽

2016 ◽

Vol 9 (3) ◽

pp. 124-138 ◽

Cited By ~ 1

Author(s):

Masataka HASEGAWA ◽

Kazuo TSUGAWA ◽

Ryuichi KATO ◽

Yoshinori KOGA ◽

Masatou ISHIHARA ◽

...

Keyword(s):

Growth Rate ◽

High Growth ◽

High Growth Rate ◽

Large Area ◽

High Quality ◽

Plasma Enhanced Cvd ◽

Graphene Synthesis

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Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.133 ◽

2015 ◽

Vol 821-823 ◽

pp. 133-136 ◽

Cited By ~ 4

Author(s):

Takanori Tanaka ◽

Naoyuki Kawabata ◽

Yoichiro Mitani ◽

Masashi Sakai ◽

Nobuyuki Tomita ◽

...

Keyword(s):

Growth Rate ◽

High Throughput ◽

Defect Density ◽

High Growth ◽

High Growth Rate ◽

Pressure Condition ◽

High Quality ◽

Growth Pressure ◽

Hcl Gas

The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure condition in a horizontal CVD reactor without chloride-containing gas. The quality of a 30-μm-thick epilayer grown with 40 μm/h was also investigated. Downfall and triangle defect density in the layer was as low as 0.16 /cm2, indicating that a high quality epitaxial wafer can be easily obtained under the condition with high throughput in the sinple CVD system.

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