Novel trigonal BC11 as model structure of heavily-doped diamond: Crystal chemistry rationale and first principles characterizations

2022 ◽  
pp. 108842
Author(s):  
Samir F. Matar
Author(s):  
William G. La Cava ◽  
Kourosh Danai

A gradient-based method of symbolic adaptation is introduced for a class of continuous dynamic models. The proposed Model Structure Adaptation Method (MSAM) starts with the first-principles model of the system and adapts its structure after adjusting its individual components in symbolic form. A key contribution of this work is its introduction of the model’s parameter sensitivity as the measure of symbolic changes to the model. This measure, which is essential to defining the structural sensitivity of the model, not only accommodates algebraic evaluation of candidate models in lieu of more computationally expensive simulation-based evaluation, but also makes possible the implementation of gradient-based optimization in symbolic adaptation. The applicability of the proposed method is evaluated in application to several models which demonstrate its potential utility.


2012 ◽  
Vol 217-219 ◽  
pp. 96-100
Author(s):  
You Jin Zheng

In this paper, a new dopant of P3N5 (phosphorus nitride) was doped into the diamond growth cell to grow diamond crystals by temperature gradient growth method (TGM) under high pressure and high temperature (HPHT). The experiments were performed at a fixed pressure of about 6.0 GPa and temperatures of 1600-1650 K. The gained diamond crystals were characterized by infrared (IR) absorption spectroscopy, micro-Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), respectively. IR measurements demonstrated that, nitrogen atom was indeed doped into diamond crystals, and the diamond crystals with perfect shape containing nitrogen concentration ranging from 461 atomic parts per million (ppm) to 2186 atomic ppm were successfully synthesized. Nitrogen atoms present in diamond crystal were predominantly in isolated form accompanied by a small amount of nitrogen pairs. Micro-Raman spectra implied that crystalline quality deteriorated with nitrogen concentration gradually increased in diamond-growing environment. The XPS spectra revealed that only a few of phosphorus impurities about tens of ppm level were incorporated into a diamond crystal which was heavily doped with P3N5. This study will promote the application of doping diamonds in micro-electronics field and other fields.


2011 ◽  
Vol 295-297 ◽  
pp. 1322-1325
Author(s):  
Zhi Hua Xiong ◽  
Lan Li Chen ◽  
Qi Xin Wan

We have performed a study on La heavily doped ZnO, based on the first principles. The calculated results show that with the increase of concentration of La, the lattice parameter is expanded. It is found that the top of valence band maximum is determined by the O-p states and the conduction band minimum is depended on the La-f and La-d states. The band gap of doping system is broadened as the increase of concentration of La, because the valence band moves towards lower energy more than the conduction band does. Furthermore, it is found that heavily doping of La with low concentration can enhance the conductivity of ZnO. The results are helpful to gain a systematic understanding of electrical properties of La-doped ZnO.


2014 ◽  
Vol 13 (08) ◽  
pp. 1450069 ◽  
Author(s):  
Freddy Marcillo ◽  
Arvids Stashans

First-principles calculations based on the density functional theory (DFT) within the generalized gradient approximation have been used in the present research. Fluorine doping in the SnO 2 crystals has been carried out considering a number of different defect concentrations. Dopant influence upon structural, electronic and electrical properties of the tin dioxide has been discussed in detail. The system presents n-type electrical conductivity relating our work directly to a number of empirical studies in this area. An experimental fact that n-type conductivity tends to decrease at rather high fluorine impurity rates has been explained at the theoretical level.


2020 ◽  
Author(s):  
Shusuke Kasamatsu ◽  
Osamu Sugino ◽  
Takafumi Ogawa ◽  
Akihide Kuwabara

<div>Y-doped BaZrO<sub>3</sub> is an ion conductor under intense research for application in medium temperature solid oxide fuel cells. The conductivity is maximized at ~20% doping, and the decrease with further doping has often been attributed to the association effect, or the trapping of ionic charge carriers by the dopant. This seems like a reasonable conjecture since the dopant and carrier are charged in opposite polarities</div><div>and should attract each other. However, at such high doping concentrations, many-body interactions between nearby dopants and carriers are likely to modify such a simple two-body attraction picture. Thus, in this work, we employ a large-scale first-principles thermodynamic sampling scheme to directly examine the configuration of dopants and charge-compensating defects at realistic doping concentrations under processing conditions. We find that although there is, indeed, a clear Y<sub>Zr</sub> – V<sub>O </sub>association effect at all doping concentrations examined, the magnitude of the effect actually decreases with increasing dopant concentration. We also find that Y<sub>Zr</sub>–Y<sub>Zr </sub>and V<sub>O</sub> –V<sub>O </sub>interactions cannot simply be understood in terms of two-body Coulomb attraction and repulsion, highlighting the importance of many-body effects in understanding the defect chemistry</div><div>in heavily doped oxides. Finally, we examine the dopant configurations and successfully explain the conductivity maximum based on a percolation vs. trapping picture that has gained attention recently.</div>


2020 ◽  
Author(s):  
Shusuke Kasamatsu ◽  
Osamu Sugino ◽  
Takafumi Ogawa ◽  
Akihide Kuwabara

<div>Y-doped BaZrO<sub>3</sub> is an ion conductor under intense research for application in medium temperature solid oxide fuel cells. The conductivity is maximized at ~20% doping, and the decrease with further doping has often been attributed to the association effect, or the trapping of ionic charge carriers by the dopant. This seems like a reasonable conjecture since the dopant and carrier are charged in opposite polarities</div><div>and should attract each other. However, at such high doping concentrations, many-body interactions between nearby dopants and carriers are likely to modify such a simple two-body attraction picture. Thus, in this work, we employ a large-scale first-principles thermodynamic sampling scheme to directly examine the configuration of dopants and charge-compensating defects at realistic doping concentrations under processing conditions. We find that although there is, indeed, a clear Y<sub>Zr</sub> – V<sub>O </sub>association effect at all doping concentrations examined, the magnitude of the effect actually decreases with increasing dopant concentration. We also find that Y<sub>Zr</sub>–Y<sub>Zr </sub>and V<sub>O</sub> –V<sub>O </sub>interactions cannot simply be understood in terms of two-body Coulomb attraction and repulsion, highlighting the importance of many-body effects in understanding the defect chemistry</div><div>in heavily doped oxides. Finally, we examine the dopant configurations and successfully explain the conductivity maximum based on a percolation vs. trapping picture that has gained attention recently.</div>


1997 ◽  
Vol 82 (7-8) ◽  
pp. 663-671 ◽  
Author(s):  
Renata M. Wentzcovitch ◽  
Lars Stixrude

Sign in / Sign up

Export Citation Format

Share Document