Effect of relative humidity on current–voltage characteristics of monopolar DC wire-to-plane system

2015 ◽  
Vol 76 ◽  
pp. 108-114 ◽  
Author(s):  
Massinissa Aissou ◽  
Hakim Ait Said ◽  
Hamou Nouri ◽  
Youcef Zebboudj
2012 ◽  
Vol 70 (1) ◽  
pp. 20-24 ◽  
Author(s):  
H. Nouri ◽  
N. Zouzou ◽  
E. Moreau ◽  
L. Dascalescu ◽  
Y. Zebboudj

1983 ◽  
Vol 22 (Part 1, No. 12) ◽  
pp. 1933-1933 ◽  
Author(s):  
Yasutake Toyoshima ◽  
Masaru Miyayama ◽  
Hiroaki Yanagida ◽  
Kunihito Koumoto

Author(s):  
А.В. Алмаев ◽  
В.И. Николаев ◽  
С.И. Степанов ◽  
Н.Н. Яковлев ◽  
А.И. Печников ◽  
...  

The effect of ambient humidity on the electrical conductive properties of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 structures has been studied. Polymorphic Ga2O3 epitaxial layers were deposited by chloride vapor phase epitaxy on sapphire substrates. Pt and Pt/Ti were used as contacts. It was found that the Pt/α-Ga2O3/Pt and Pt/Ti/α-Ga2O3/ε-Ga2O3/Ti/Pt structures exhibit a high sensitivity of the current – voltage characteristics (I–V characteristics) to atmospheric humidity in the temperature range 25–100 °C. It was found that the effect of water vapor on the I–V characteristics of the structures is reversible and the most significant changes in the current in the samples are observed at a relative humidity RH ≥ 60%. With increasing temperature the effect of atmospheric humidity on the I–V characteristics decreases and disappears at T > 100 °C. The experimental results obtained are explained in terms of the Grottguss mechanism.


2017 ◽  
Vol 2017 ◽  
pp. 1-6
Author(s):  
Raimonds Meija ◽  
Gunta Kunakova ◽  
Juris Prikulis ◽  
Justin M. Varghese ◽  
Justin D. Holmes ◽  
...  

Electrical properties of Bi2S3nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.


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