scholarly journals Влияние влажности окружающей среды на электрическую проводимость полиморфных Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--структур

2021 ◽  
Vol 55 (3) ◽  
pp. 269
Author(s):  
А.В. Алмаев ◽  
В.И. Николаев ◽  
С.И. Степанов ◽  
Н.Н. Яковлев ◽  
А.И. Печников ◽  
...  
Keyword(s):  
Water Vapor ◽  
Relative Humidity ◽  
Vapor Phase ◽  
High Sensitivity ◽  
Atmospheric Humidity ◽  
Sapphire Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Increasing Temperature ◽  
Conductive Properties

The effect of ambient humidity on the electrical conductive properties of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 structures has been studied. Polymorphic Ga2O3 epitaxial layers were deposited by chloride vapor phase epitaxy on sapphire substrates. Pt and Pt/Ti were used as contacts. It was found that the Pt/α-Ga2O3/Pt and Pt/Ti/α-Ga2O3/ε-Ga2O3/Ti/Pt structures exhibit a high sensitivity of the current – voltage characteristics (I–V characteristics) to atmospheric humidity in the temperature range 25–100 °C. It was found that the effect of water vapor on the I–V characteristics of the structures is reversible and the most significant changes in the current in the samples are observed at a relative humidity RH ≥ 60%. With increasing temperature the effect of atmospheric humidity on the I–V characteristics decreases and disappears at T > 100 °C. The experimental results obtained are explained in terms of the Grottguss mechanism.

Effect of relative humidity on current–voltage characteristics of monopolar DC wire-to-plane system

2015 ◽  
Vol 76 ◽  
pp. 108-114 ◽  
Author(s):  
Massinissa Aissou ◽  
Hakim Ait Said ◽  
Hamou Nouri ◽  
Youcef Zebboudj
Keyword(s):  
Relative Humidity ◽  
Plane System ◽  
Current Voltage ◽  
Current Voltage Characteristics

High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 1339-1342 ◽  
Author(s):  
Michael E. Levinshtein ◽  
Pavel A. Ivanov ◽  
Mykola S. Boltovets ◽  
Valentyn A. Krivutsa ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Deep Level ◽  
Reverse Current ◽  
Differential Resistance ◽  
Base Resistance ◽  
Small Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Increasing Temperature ◽  
Surface Leakage ◽  
And Diffusion

Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range Т = 300 – 773 К. Analysis of the forward current-voltage characteristics and reverse current recovery waveforms shows that the lifetimeτ of non-equilibrium carriers in the base of the diodes steadily increases with temperature across the entire temperature interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd. As a result, Rd is virtually temperature independent. An appreciable modulation of the base resistance takes place at room temperature even at a relatively small current density j of 20 A/cm2. At T = 800 K and j = 20 A/cm2, a very deep level of the base modulation has been observed. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2×10-6 А at T = 773 K and a reverse bias of 300 V.

Deep-Level Dominated Current-Voltage Characteristics of Novel Semiconductor Heterostructures

1989 ◽  
Vol 163 ◽  
Author(s):  
K. Das
Keyword(s):  
Molecular Beam ◽  
Deep Level ◽  
Silicon On Insulator ◽  
Conduction Band Edge ◽  
Material System ◽  
Discrete State ◽  
Sapphire Substrates ◽  
Current Voltage ◽  
Gaas Films ◽  
Current Voltage Characteristics

AbstractCurrent-voltage characteristics of Au contacts formed on buried implanted oxide silicon-on-insulator structures and molecular beam epitaxially grown GaAs on (1012) sapphire and silicon-on-sapphire substrates indicate that the dominant transport mechanism in these films is space-charge-limited current conduction in the presence of deep-level states. The deep-level parameters, determined using an analysis of the current-voltage characteristics, appear to be sensitive to the nature of crystallographic defects present in the grown layers. Conduction in the GaAs film on SOS was dominated by one discrete state located ~ 0.28eV below the conduction band-edge, which is close to the El center uniquely observed in the molecular beam epitaxially grown GaAs-on-Si. Discrete levels are also observed in annealed buried implanted oxide silicon-on-insulator films. In contrast, the GaAs films deposited directly on (1012) sapphire substrates and rapid-thermally annealed high-dose As implanted buried oxide SOI films appear to have a continuous distribution of states. The distributed states in GaAs films deposited directly on sapphire probably arise from the electrical activity of the double-position boundaries present in this material system.

scholarly journals Влияние ультрафиолетового излучения и электрического поля на проводимость структур на основе alpha- и ε-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

2020 ◽  
Vol 54 (10) ◽  
pp. 1035
Author(s):  
В.М. Калыгина ◽  
В.И. Николаев ◽  
А.В. Алмаев ◽  
А.В. Цымбалов ◽  
В.В. Копьев ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Recovery Time ◽  
Gallium Oxide ◽  
Strong Electric Field ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
Patterned Substrate ◽  
Sapphire Substrates ◽  
Regular Structures ◽  
Current Voltage

The influence of ultraviolet radiation and a strong electric field on the current-voltage characteristic of resistive structures based on polymorphic films of gallium oxide is studied. Both types of Ga2O3 films were obtained by the method of chloride vapor-phase epitaxy on smooth and structured sapphire substrates with orientation (0001). In the same process α-Ga2O3 films were deposited on smooth substrates, and gallium oxide films, with regular structures perpendicular to the substrate, containing alternating regions of the α- and ε-phases were deposited on patterned substrate. It’s was observed, that radiation with λ = 254 nm and strong electric transfer structures from a state with low resistance to a state with high resistance. The response time to UV radiation is 5 seconds, and the recovery time less than 1 s.

scholarly journals CURRENT-VOLTAGE CHARACTERISTICS OF SOLAR CELLS p-n JUNCTION ZnO AND TiO2 PARAREL ON Cu2O LAYER

2020 ◽  
Vol 12 (1) ◽  
pp. 1
Author(s):  
Teuku Andi Fadlly ◽  
Rachmad Almi Putra
Keyword(s):  
Solar Cells ◽  
Thermal Oxidation ◽  
Solar Irradiation ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Impurity Layer ◽  
Current Voltage ◽  
Type Semiconductor ◽  
Current Voltage Characteristics ◽  
Increasing Temperature

Current-Voltage Characteristics of solar cells p-n junction ZnO and TiO<sub>2</sub> parallel in the Cu<sub>2</sub>O layer has been determined using solar irradiation. Metal oxide has been used as a semiconductor material, such as ZnO and TiO<sub>2</sub> is an n-type semiconductor. The material has a gap energy of 3.37 eV and 3.2 eV. Thermal oxidation is applied to commercial Cu plates for 60 minutes to produce Cu<sub>2</sub>O layers as p-type semiconductors. The process varies in temperature, namely 300, 400, and 500 °C. The process of thermal oxidation on Cu plates at a temperature of 300 °C increases the impurity in the Cu<sub>2</sub>O layer. The impurity layer is CuO. Then the CuO layer formed decreases with increasing temperature thermal oxidation. CuO layer increases the efficiency of solar cells p-n junction TiO<sub>2</sub>-ZnO parallel in the layer Cu<sub>2</sub>O. The results of measurements with sunlight showed that the TiO<sub>2</sub>-ZnO/Cu<sub>2</sub>O (300) samples had the highest solar cell efficiency, which was 0.28 %.

Effect of relative humidity on current–voltage characteristics of an electrostatic precipitator

2012 ◽  
Vol 70 (1) ◽  
pp. 20-24 ◽  
Author(s):  
H. Nouri ◽  
N. Zouzou ◽  
E. Moreau ◽  
L. Dascalescu ◽  
Y. Zebboudj
Keyword(s):  
Relative Humidity ◽  
Electrostatic Precipitator ◽  
Current Voltage ◽  
Current Voltage Characteristics

Effect of Relative Humidity on Current-Voltage Characteristics of Li-Doped CuO/ZnO Junction

1983 ◽  
Vol 22 (Part 1, No. 12) ◽  
pp. 1933-1933 ◽  
Author(s):  
Yasutake Toyoshima ◽  
Masaru Miyayama ◽  
Hiroaki Yanagida ◽  
Kunihito Koumoto
Keyword(s):  
Relative Humidity ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Солнечно-слепые детекторы УФ-излучения на основе пленок beta-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-

2020 ◽  
Vol 54 (6) ◽  
pp. 575
Author(s):  
В.М. Калыгина ◽  
А.В. Алмаев ◽  
В.А. Новиков ◽  
Ю.С. Петрова
Keyword(s):  
Phase Composition ◽  
Wavelength Range ◽  
Gallium Oxide ◽  
Oxide Films ◽  
Platinum Electrodes ◽  
Sapphire Substrates ◽  
Visible Wavelength Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resistive Type

Resistive-type structures based on gallium oxide films were studied. Ga2O3 films were obtained by radio-frequency magnetron-assisted sputtering of a β-Ga2O3 (99.9999%) target onto unheated sapphire substrates with pre-deposited platinum electrodes. The structure and phase composition of the gallium-oxide films were determined. The current–voltage characteristics of the samples without and with exposure to radiation at the wavelengths λ = 254 nm were measured. It was shown that after annealing, the photocurrent increases by an order. The absence of sensitivity of the studied structures to radiation in the visible wavelength range was experimentally confirmed.

Positive Temperature Coefficient of Resistance in MOCVD (Ba0.75Sr0.25)Ti1+yO3+z Films

2002 ◽  
Vol 748 ◽  
Author(s):  
S. Saha ◽  
D. Y. Kaufman ◽  
S. K. Streiffer ◽  
R. A. Erck ◽  
O. Auciello
Keyword(s):  
Temperature Coefficient ◽  
Weak Field ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Temperature Coefficient Of Resistance ◽  
Current Voltage ◽  
Ptcr Effect ◽  
Bst Films ◽  
Current Voltage Characteristics ◽  
Increasing Temperature

ABSTRACTThe leakage and dielectric properties of a thickness series (90–480 nm) of {100} fiber-textured MOCVD (Ba0.75Sr0.25)Ti1+yO3+z (BST) thin films on Pt/SiO2/Si were investigated. The temperature and voltage dependence of the permittivity were consistent with previous observations, where thinner films demonstrated a suppressed temperature and electric field response that transitioned to a more bulk-like response with increasing film thickness. The current-voltage characteristics showed two distinct regimes. At low fields the current displayed weak field dependence and a monotonic increase with increasing temperature. In contrast, positive temperature coefficient of resistance (PTCR) was observed in the high-field leakage current behavior. The PTCR behavior was more pronounced for thicker BST films. Factors contributing to the observed PTCR effect are outlined and contrasted with the description for bulk BaTiO3 ceramics.

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