Effect of electrode shape and deposition technique on electrochemical treatment of ampicillin in water

2021 ◽  
pp. 101709
Author(s):  
Yasmine Ben Osman ◽  
Jean-Marc Le Meins ◽  
Latifa Bousselmi ◽  
Hanene Akrout ◽  
Dominique Berling
Keyword(s):  
Electrochemical Treatment ◽  
Deposition Technique ◽  
Electrode Shape

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

The Dependence of Nonlinear Electrical Properties of Yeast Suspensions on Temperature and Electrode Shape

2019 ◽  
Vol 139 (8) ◽  
pp. 339-344
Author(s):  
Keita Tamura ◽  
Masafumi Muraji ◽  
Kenji Tanaka ◽  
Tatsuru Shirafuji
Keyword(s):  
Electrical Properties ◽  
Electrode Shape

Bioadsorption of Multiple Heavy Metal Ions by Rhizophora Apiculate sp. and Elaesis Guineensis sp.

2017 ◽  
Vol 14 (1) ◽  
pp. 15
Author(s):  
M.B. Nicodemus Ujih ◽  
Mohammad Isa Mohamadin ◽  
Milla-Armila Asli ◽  
Bebe Norlita Mohammed
Keyword(s):  
Heavy Metal ◽  
Metal Ions ◽  
Removal Efficiency ◽  
Heavy Metal Ions ◽  
Agricultural Waste ◽  
Living Organism ◽  
Heavy Metal Concentration ◽  
Industrial Area ◽  
Electrochemical Treatment ◽  
Chemical Oxidation

Heavy metal ions contamination has become more serious which is caused by the releasing of toxic water from industrial area and landfill that are very harmful to all living organism especially human and can even cause death if contaminated in small amount of heavy metal concentration. Currently, peoples are using classic method namely electrochemical treatment, chemical oxidation/reduction, chemical precipitation and reverse osmosis to eliminate the metal ions from toxic water. Unfortunately, these methods are costly and not environmentally friendly as compared to bioadsorption method, where agricultural waste is used as biosorbent to remove heavy metals. Two types of agricultural waste used in this research namely oil palm mesocarp fiber (Elaesis guineensis sp.) (OPMF) and mangrove bark (Rhizophora apiculate sp.) (MB) biomass. Through chemical treatment, the removal efficiency was found to improve. The removal efficiency is examined based on four specification namely dosage, of biosorbent to adsorb four types of metals ion explicitly nickel, lead, copper, and chromium. The research has found that the removal efficiency of MB was lower than OPMF; whereas, the multiple metals ions removal efficiency decreased in the order of Pb2+ > Cu2+ > Ni2+ > Cr2+.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

THE MECHANISM OF NITRATES TRANSFORMATION IN THE PROCESSES OF ELECTROCHEMICAL TREATMENT OF NATURAL WATERS

2002 ◽  
Vol 1 (3) ◽  
pp. 341-346
Author(s):  
Viorica Iambartev ◽  
Gheorghe Duca ◽  
Maria Gonta ◽  
Vera Matveevici
Keyword(s):  
Natural Waters ◽  
Electrochemical Treatment

ELECTROCHEMICAL TREATMENT OF MUSTARD WASTEWATER USING CARBON PAPER ELECTRODE

2011 ◽  
Vol 10 (6) ◽  
pp. 813-817
Author(s):  
Qiang He ◽  
Hainan Ai ◽  
Hongxiang Chai ◽  
Xuebin Hu ◽  
Tengrui Long
Keyword(s):  
Electrochemical Treatment ◽  
Carbon Paper

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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