Preserving quality of fresh cut watermelon cubes for vending distribution by low-dose electron beam processing

This study reveals the efficiency of the electron beam processing of titanium technogenic material with a high level of impurities and the quality of the obtained metal in correlation to process parameters which are discussed. The influence of the beam power and melting time on the composition variation, morphologies, hardness of metal samples and mass losses is investigated. Based on the different technological parameters, the removal efficiency of impurities is also discussed, and the corresponding experiments are carried out in order to make a comparison. Different thermal process conditions are realized during the single-melt operation. Chemical and metallographic analyses are performed, and the results are discussed. The hardness of the titanium decreases by prolonging the time of the electron beam processing. A maximal overall removal efficiency of 99.975% is seen at 5.5 kW beam power for a 40 min melting time and the best purification of Ti (99.996%) is achieved.

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Preserving fresh fruit quality by low-dose electron beam processing for vending distribution channels

Radiation Physics and Chemistry ◽

10.1016/j.radphyschem.2019.108540 ◽

2020 ◽

Vol 168 ◽

pp. 108540 ◽

Cited By ~ 3

Author(s):

Bianca Smith ◽

Shima Shayanfar ◽

Rosemary Walzem ◽

Christine Z. Alvarado ◽

Suresh D. Pillai

Keyword(s):

Electron Beam ◽

Fruit Quality ◽

Low Dose ◽

Distribution Channels ◽

Fresh Fruit ◽

Electron Beam Processing

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Acute and sub-acute toxicity profile of ultra-hypofractionated low-dose total skin electron beam with two 4 Gy fractions for cutaneous T cell lymphoma

Journal of Cancer Research and Clinical Oncology ◽

10.1007/s00432-020-03449-7 ◽

2020 ◽

Author(s):

Daniel Rolf ◽

Khaled Elsayad ◽

Hans Theodor Eich

Keyword(s):

Quality Of Life ◽

Electron Beam ◽

T Cell ◽

Systemic Therapy ◽

Low Dose ◽

Prospective Trial ◽

Tumor Burden ◽

Skin Tumor ◽

The Impact

Abstract Purpose Low-dose total skin electron beam therapy (TSEBT) over 3 weeks has proved to be a safe and effective treatment for cutaneous T cell lymphomas (CTCL). In this prospective trial, we examined the feasibility of ultra-hypofractionated low-dose TSEBT regimen in two fractions with 4 Gy combined with systemic therapy to minimize the number of visits to radiation centers. Patients and methods Six patients with mycosis fungoides (MF) or Sézary syndrome (SS) received TSEBT with a total radiation dose of 8 Gy in two fractions between April 2020 and June 2020. Patient and treatment characteristics, tumor burden, the impact on the quality of life using Skindex-29 questionnaires, and acute toxicities were analyzed. Results During TSEBT, all patients developed grade 1 toxicities while two patients developed grade 2 toxicities. One patient experienced sepsis. The most common adverse effects were erythema and edema. All grade 2 toxicities regressed after 4 weeks following TSEBT. Based on the reported symptoms measured by Skindex-29, we detected a significant reduction in total Skindex-29 score after 8 weeks of radiation (P = 0.03), particularly in the symptoms (P = 0.01) and emotional domains (P = 0.04). Conclusion Ultra-hypofractionated low-dose TSEBT followed by systemic therapy seems to be a safe and feasible alternative to conventional fractionated TSEBT for patients with MF/SS. The skin tumor burden and the health-related quality of life have been significantly improved within 8 weeks following radiotherapy.

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Pulsed Electron Beam Processing of Silicon Devices

MRS Proceedings ◽

10.1557/proc-1-321 ◽

1980 ◽

Vol 1 ◽

Author(s):

A. C. Greenwald ◽

R. P. Dolan ◽

S. P. Tobin

Keyword(s):

Electron Beam ◽

Low Temperature ◽

Low Dose ◽

Electron Beams ◽

Pulsed Electron Beam ◽

Process Sequence ◽

Pulse Processing ◽

Silicon Devices ◽

Electron Beam Processing ◽

Thermal Oxide

ABSTRACTPulsed electron beams [1] were used to anneal ion-implanted diodes, transistors, and resistors. Devices were fabricated by patterning a thermal oxide on a silicon wafer, ion-implanting and pulse processing with the oxide in place, and then applying contacts. Oxide films over 0.3 micron thick were not damaged, and the silicon below these films was not melted by the pulsed electron beam. Low-dose (101311B+/cm2), implanted, pulse-annealed resistors showed no change in sheet resistance for oxide windows 2.5 to 50.0 microns wide. Diodes were fashioned with good forward and reverse I-V characteristics, with m=1.09 and IO=2.7×10−10 A/cm2 for I=IO exp(qV.mkT)−1 , when a low-temperature (550˚C, 1 hr), postpulse anneal was included in the process sequence. Both bipolar and FET types of transistors were fabricated. Results compare favorably with thermal annealing cycles.

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