Improving passivation properties using a nano-crystalline silicon oxide layer for high-efficiency TOPCon cells

2021 ◽  
Vol 115 ◽  
pp. 103723
Author(s):  
Muhammad Quddamah Khokhar ◽  
Sanchari Chowdhury ◽  
Duy Phong Pham ◽  
Shahzada Qamar Hussain ◽  
Eun-Chel Cho ◽  
...  
Keyword(s):  
Oxide Layer ◽  
High Efficiency ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Oxide Layer ◽  
Nano Crystalline

High-efficiency hybrid solar cell with a nano-crystalline silicon oxide layer as an electron-selective contact

2021 ◽  
pp. 115033
Author(s):  
Muhammad Quddamah Khokhar ◽  
Shahzada Qamar Hussain ◽  
Sanchari Chowdhury ◽  
Muhammad Aleem Zahid ◽  
Duy Phong Pham ◽  
...  
Keyword(s):  
Solar Cell ◽  
Oxide Layer ◽  
High Efficiency ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Hybrid Solar Cell ◽  
Silicon Oxide Layer ◽  
Nano Crystalline

The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

2013 ◽  
Vol 15 (4) ◽  
Author(s):  
A. En Naciri ◽  
P. Miska ◽  
A.-S. Keita ◽  
Y. Battie ◽  
H. Rinnert ◽  
...  
Keyword(s):  
Optical Properties ◽  
Oxide Layer ◽  
Silicon Nanocrystals ◽  
Silicon Oxide ◽  
Silicon Oxide Layer

Origin of Mosaic Structure Obtained During the Production of Porous Silicon with Electrochemical Etching

2019 ◽  
Vol 11 (12) ◽  
pp. 1218-1224
Author(s):  
Dao Tran Cao ◽  
Cao Tuan Anh ◽  
Luong Truc Quynh Ngan
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Current Density ◽  
Silicon Oxide ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Mosaic Structure ◽  
Anodic Current Density ◽  
Anodic Current ◽  
Silicon Oxide Layer

So far, while producing porous silicon (PSi) with anodic etching of silicon in an aqueous solution of hydrofluoric acid, many researchers (including us) have obtained the crack-into-pieces (or mosaic) structure. Most of the authors believed that the cause of this structure is the collapse and the cracking of the porous, especially highly porous, silicon layer which took place during the drying of PSi after fabrication. However, our study showed that the mosaic structure was formed right during the course of silicon anodization at high anodic current density. Furthermore, our study also showed that at high anodic current density the real silicon etching has been replaced by the growth of a silicon oxide layer. This is a layer of another substance that grows on silicon, so when the layer is too thick (which is obtained when the anodic current density is too high and/or the anodization time is too long) it will crack, creating mosaic pieces. When the silicon oxide layer is cracked, the locations around the cracks will be etched more violently than elsewhere, creating trenches. Thus, the mosaic structure with mosaic pieces emerged between the trenches has formed.

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