RETRACTED: Dependence of the structural and optical properties of ZnO thin films on the substrate temperature in atomic layer deposition and post-annealing

2008 ◽  
Vol 449 (1-2) ◽  
pp. 371-374 ◽  
Author(s):  
Jongmin Lim ◽  
Chongmu Lee
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Substrate Temperature ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Structural And Optical Properties ◽  
Post Annealing ◽  
Layer Deposition

Effect of Annealing Atmosphere on the Structural and Optical Properties of ZnO Thin Films on Si (100) Substrates Grown by Atomic Layer Deposition

2015 ◽  
Vol 37 ◽  
pp. 92-98 ◽  
Author(s):  
J.L. Tian ◽  
Gui Gen Wang ◽  
Hua Yu Zhang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Hexagonal Wurtzite Structure ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Annealing Atmosphere ◽  
Structural And Optical Properties ◽  
Layer Deposition ◽  
Crystallographic Planes

ZnO thin films were deposited on Si (100) substrates by atomic layer deposition. Annealing treatments for the as-deposited films were performed in nitrogen, oxygen, argon and air at 800 °C, respectively. The influence of annealing atmosphere on the structural and optical properties of the ALD-ZnO thin films was investigated by XRD, SEM, and PL. Results reveals that the films annealed in oxygen atmosphere exhibited excellent crystallinity (polycrystalline hexagonal wurtzite structure with a strong (002) preferred crystallographic planes), relatively smooth surface and better luminescence performance, which means that O2 is the most suitable annealing atmosphere for obtaining high quality ALD-ZnO thin films.

Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition

2012 ◽  
Vol 30 (2) ◽  
pp. 021202 ◽  
Author(s):  
Tara Dhakal ◽  
Daniel Vanhart ◽  
Rachel Christian ◽  
Abhishek Nandur ◽  
Anju Sharma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Growth Morphology ◽  
Layer Deposition ◽  
Doped Zno

scholarly journals Tunable optical properties in atomic layer deposition grown ZnO thin films

2017 ◽  
Vol 35 (1) ◽  
pp. 01B108 ◽  
Author(s):  
Dipayan Pal ◽  
Aakash Mathur ◽  
Ajaib Singh ◽  
Jaya Singhal ◽  
Amartya Sengupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Tunable Optical Properties

scholarly journals Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films

2017 ◽  
Vol 421 ◽  
pp. 341-348 ◽  
Author(s):  
Dipayan Pal ◽  
Jaya Singhal ◽  
Aakash Mathur ◽  
Ajaib Singh ◽  
Surjendu Dutta ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition

scholarly journals Zinc Oxide Films with High Transparency and Crystallinity Prepared by a Low Temperature Spatial Atomic Layer Deposition Process

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 459 ◽  
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Tao Sun ◽  
Chia-Hsun Hsu ◽  
Pao-Hsun Huang ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Substrate Temperature ◽  
Atomic Layer ◽  
Infrared Light ◽  
Zno Thin Films ◽  
Process Window ◽  
Layer Deposition

Zinc oxide (ZnO) attracts much attention owing to its remarkable electrical and optical properties for applications in optoelectronics. In this study, ZnO thin films were prepared by spatial atomic layer deposition with diethylzinc and water as precursors. The substrate temperature was varied from 55 to 135 °C to investigate the effects on the optical, electrical, and structural properties of the films. All ZnO samples exhibit an average transmittance in visible and near-infrared light range exceeding 80% and a resistivity in the range of (3.2–9.0) × 10−3 Ω·cm when deposited on a borosilicate glass with a refractive index of ≈1.52. The transmittance, band gap, refractive index, and extinction coefficient are rarely affected, while the resistivity only slightly decreases with increasing temperature. This technique provides a wide process window for depositing ZnO thin films. The results revealed that the films deposited at a substrate of 55 °C were highly crystalline with a preferential (1 0 0) orientation. In addition, the grains grow larger as the substrate temperature increases. The electrical properties and reliability of ZnO/PET samples are also studied in this paper.

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