Effect of doping on trapping center parameters in nanocrystalline CdSe thin films

2013 ◽  
Vol 555 ◽  
pp. 1-5 ◽  
Author(s):  
Alaa S. Al-Kabbi ◽  
Kriti Sharma ◽  
G.S.S. Saini ◽  
S.K. Tripathi
2019 ◽  
Vol 12 (25) ◽  
pp. 80-88
Author(s):  
Salma M. Shaban

Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.


2006 ◽  
Vol 4 (2) ◽  
pp. 234-245 ◽  
Author(s):  
Kaijian Zhang ◽  
Wei Xu ◽  
Xinjun Li ◽  
Shaojian Zheng ◽  
Gang Xu

AbstractThe thin films of TiO2 doped by Mn non-uniformly were prepared by sol-gel method under process control. In our preceding study, we investigated in detail, the effect of doping mode on the photocatalytic activity of TiO2 films showing that Mn non-uniform doping can greatly enhance the activity. In this study we looked at the effect of doping concentration on the photocatalytic activity of the TiO2 films. In this paper, the thin films were characterized by UV-vis spectrophotometer and electrochemical workstation. The activity of the photocatalyst was also evaluated by photocatalytic degradation rate of aqueous methyl orange under UV radiation. The results illustrate that the TiO2 thin film doped by Mn non-uniformly at the optimal dopant concentration (0.7 at %) is of the highest activity, and on the contrary, the activity of those doped uniformly is decreased. As a comparison, in 80 min, the degradation rate of methyl orange is 62 %, 12 % and 34 % for Mn non-uniform doping film (0.7 at %), the uniform doping film (0.7 at %) and pure titanium dioxide film, respectively. We have seen that, for the doping and the pure TiO2 films, the stronger signals of open circuit potential and transient photocurrent, the better photocatalytic activity. We also discusse the effect of dopant concentration on the photocatalytic activity of the TiO2 films in terms of effective separation of the photon-generated carriers in the semiconductor.


2017 ◽  
Vol 23 (S1) ◽  
pp. 1606-1607
Author(s):  
Marco Campanini ◽  
Morgan Trassin ◽  
Claude Ederer ◽  
Rolf Erni ◽  
Marta D. Rossell

2016 ◽  
Vol 480 ◽  
pp. 31-35 ◽  
Author(s):  
Trilok Kumar Pathak ◽  
Vinod Kumar ◽  
H.C. Swart ◽  
L.P. Purohit

2019 ◽  
Vol 25 (12) ◽  
pp. 65-72 ◽  
Author(s):  
Krasimira Shtereva ◽  
Vladimir Tvarozek ◽  
Marie Netrvalova ◽  
Pavol Sutta ◽  
Ivan Novotny ◽  
...  

2008 ◽  
Vol 63 (9) ◽  
pp. 585-590
Author(s):  
Jayaraman Elanchezhiyan ◽  
Periyasamy Bhuvana ◽  
Nammalvar Gopalakrishnan ◽  
Arumugam Thamizhavel ◽  
Thailampillai Balasubramanian

We have investigated the effect of doping concentration on structural, optical and magnetic properties of Mn-doped ZnO thin films deposited on Si (100) substrate by RF magnetron sputtering. The films have been characterized by X-ray diffraction (XRD), photoluminescence (PL) and superconducting quantum interference device (SQUID) magnetometry. It is observed from XRD, that the increase of Mn content increases the FWHM which indicates the degradation of crystalline quality. The photoluminescence spectrum reveals that the incorporation of Mn ions suppresses the deep level emissions considerably in comparison to those observed in pure ZnO. The near band edge (NBE) emission of Mn-doped films is shifted to the lower energy side (red shift) in comparison to pure ZnO film. The room temperature SQUID magnetometer results reveal that all the films show paramagnetic behaviour due to the lack of interactions among Mn moments.


2007 ◽  
Vol 134 (2) ◽  
pp. 447-451 ◽  
Author(s):  
Z. Ben Achour ◽  
T. Ktari ◽  
B. Ouertani ◽  
O. Touayar ◽  
B. Bessais ◽  
...  

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