Dominant growth of higher manganese silicide film on Si substrate by introducing a Si oxide capping layer

2018 ◽  
Vol 740 ◽  
pp. 541-544 ◽  
Author(s):  
Shuaiqi Cao ◽  
Qingjie Wang ◽  
Junhua Hu ◽  
Zhenya Fu ◽  
Kuifeng Bai ◽  
...  
Author(s):  
T.S. Kamilov ◽  
D.K. Kabilov ◽  
S.Kh. Babadjanov ◽  
R.Kh. Kamilova ◽  
M.E. Azimov ◽  
...  

2014 ◽  
Vol 28 (26) ◽  
pp. 1450181 ◽  
Author(s):  
Q. R. Hou ◽  
B. F. Gu ◽  
Y. B. Chen

Higher manganese silicide film ( HMS , MnSi x, x = 1.73–1.75) with addition of Si : B has been prepared on quartz substrate ( SiO 2) by magnetron sputtering of MnSi 2 and Si : B (1 at.% B content) targets. It is found that the Si : B -added HMS film has a much lower electrical resistivity (R) but maintains its high Seebeck coefficient (S). As a result, the thermoelectric power factor, PF = S2/R, is greatly enhanced. It is also found that the metal In together with Ag -paste can be used as ohmic contact materials for measuring the electrical properties of the HMS film. The thermoelectric power factor can reach 1255 μW/m-K2 at 733 K for the Si : B -added HMS film, which is about two times higher than that of the pure HMS film.


2016 ◽  
Vol 11 (9-10) ◽  
pp. 610-616 ◽  
Author(s):  
Andrey S. Orekhov ◽  
T. S. Kamilov ◽  
Anton S. Orekhov ◽  
N. A. Arkharova ◽  
E. V. Rakova ◽  
...  

2019 ◽  
Vol 19 (3) ◽  
pp. 1699-1703 ◽  
Author(s):  
Si-Young Son ◽  
Yeon-Jin Baek ◽  
Ji-Hyun Beck ◽  
Jong-Bae Kim ◽  
Seung-Ho Yang ◽  
...  

2013 ◽  
Vol 25 (4) ◽  
pp. 632-638 ◽  
Author(s):  
Ankit Pokhrel ◽  
Zachary P. Degregorio ◽  
Jeremy M. Higgins ◽  
Steven N. Girard ◽  
Song Jin

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