Role of Nitrogen Incorporation into Hf-Based High-kGate Dielectrics for Termination of Local Current Leakage Paths

2005 ◽  
Vol 44 (No. 43) ◽  
pp. L1333-L1336 ◽  
Author(s):  
Heiji Watanabe ◽  
Satoshi Kamiyama ◽  
Naoto Umezawa ◽  
Kenji Shiraishi ◽  
Shiniti Yoshida ◽  
...  
Keyword(s):  
Current Leakage ◽  
Nitrogen Incorporation ◽  
Local Current

Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method

2019 ◽  
Vol 58 (5) ◽  
pp. 050918 ◽  
Author(s):  
Takeaki Hamachi ◽  
Tetsuya Tohei ◽  
Masayuki Imanishi ◽  
Yusuke Mori ◽  
Akira Sakai
Keyword(s):  
Single Crystals ◽  
Threading Dislocations ◽  
Flux Method ◽  
Current Leakage ◽  
Local Current ◽  
Bulk Single Crystals

Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

2019 ◽  
Vol 775 ◽  
pp. 1301-1306 ◽  
Author(s):  
Xiaodi Wei ◽  
Hong Huang ◽  
Cong Ye ◽  
Wei Wei ◽  
Hao Zhou ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Device Performance ◽  
Nitrogen Incorporation

Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitrogen Incorporation

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Role of nitrogen incorporation into Al2O3-based resistive random-access memory

2014 ◽  
Vol 7 (7) ◽  
pp. 074202 ◽  
Author(s):  
Moon Young Yang ◽  
Katsumasa Kamiya ◽  
Hiroki Shirakawa ◽  
Blanka Magyari-Köpe ◽  
Yoshio Nishi ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Nitrogen Incorporation

scholarly journals Reaction-layer asymptotics and the electrochemical pickling of steel

2011 ◽  
Vol 467 (2133) ◽  
pp. 2534-2560 ◽  
Author(s):  
M. Vynnycky ◽  
N. Ipek
Keyword(s):  
Numerical Model ◽  
Density Profile ◽  
Reaction Layer ◽  
Systematic Approach ◽  
Asymptotic Methods ◽  
Computational Mesh ◽  
Local Current ◽  
Current Density Profile ◽  
Homogeneous Chemical

Asymptotic methods are used to explore the role of one of the homogeneous chemical reactions, water protolysis, in a recent numerical model for the electrochemical pickling of steel. The analysis helps to interpret the somewhat surprising results of the original numerical model: that the local current density profile at the pickled strip does not depend on whether the water protolysis reaction is included in the model or not. The analysis also gives a useful systematic approach for determining qualitative estimates for the width of reaction boundary layers at cell electrodes, which can be of help when designing a computational mesh for the numerical solution of electrochemical models that have such layers.

(Rapid) Thermal Nitridation of SiO2 films

1989 ◽  
Vol 146 ◽  
Author(s):  
J.B. Oude Elferink ◽  
F.H.P.M. Habraken ◽  
W.F. van der Weg
Keyword(s):  
Activation Energy ◽  
Silicon Dioxide ◽  
Effective Activation Energy ◽  
Effective Activation ◽  
Nitrogen Incorporation ◽  
Nitridation Process ◽  
Initial Stage ◽  
Thermal Nitridation ◽  
Silicon Nitridation

ABSTRACTIn this paper we report on the composition of thermally nitrided silicon dioxide films on silicon. Nitridation temperatures ranging from 950 to 1150ºC and nitridation times ranging from 10 to 240 s were used. The purpose of this study is to reveal the mechanisms involved in the nitridation process with emphasis on the role of hydrogen. From the temperature dependence of the amount of nitrogen in the films the effective activation energy for nitrogen incorporation in this initial stage was deduced.

Sign in / Sign up

Export Citation Format

Share Document