Abrasive mechanisms and interfacial mechanics of amorphous silicon carbide thin films in chemical-mechanical planarization

2020 ◽  
Vol 845 ◽  
pp. 156100 ◽  
Author(s):  
Van-Thuc Nguyen ◽  
Te-Hua Fang
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Chemical Mechanical Planarization ◽  
Amorphous Silicon Carbide ◽  
Interfacial Mechanics

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide

Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

2012 ◽  
Vol 522 ◽  
pp. 136-144 ◽  
Author(s):  
Jérémy Barbé ◽  
Ling Xie ◽  
Klaus Leifer ◽  
Pascal Faucherand ◽  
Christine Morin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Silicon Nanocrystals ◽  
Film Properties ◽  
Amorphous Silicon Carbide ◽  
Carbide Alloy

RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films

2014 ◽  
Vol 40 (7) ◽  
pp. 9791-9797 ◽  
Author(s):  
Enlong Chen ◽  
Guoping Du ◽  
Yu Zhang ◽  
Xiaomei Qin ◽  
Hongmei Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

Effect of deposition temperature on the properties of amorphous silicon carbide thin films

2006 ◽  
Vol 515 (2) ◽  
pp. 651-653 ◽  
Author(s):  
J. Huran ◽  
I. Hotový ◽  
J. Pezoltd ◽  
N.I. Balalykin ◽  
A.P. Kobzev
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Amorphous Silicon Carbide

scholarly journals Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54388-54397 ◽  
Author(s):  
R. K. Tripathi ◽  
O. S. Panwar ◽  
A. K. Kesarwani ◽  
Ishpal Rawal ◽  
B. P. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Vacuum Arc ◽  
Amorphous Silicon Carbide ◽  
Silicon Target ◽  
Filtered Cathodic Vacuum Arc ◽  
Hydrogenated Amorphous

This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique using P doped solid silicon target as a cathode in the presence of acetylene gas.

Structural and Piezoresistive Characteristics of Amorphous Silicon Carbide Films Grown on AlN/Si Substrates

2012 ◽  
Vol 1433 ◽  
Author(s):  
Mariana A. Fraga ◽  
Humber Furlan ◽  
Rodrigo S. Pessoa ◽  
Luiz A. Rasia
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Rf Magnetron Sputtering ◽  
Gauge Factor ◽  
Amorphous Silicon Carbide ◽  
Si Substrates ◽  
Intermediate Layers ◽  
Thin Film Resistors ◽  
Lift Off

ABSTRACTAmorphous silicon carbide (a-SiC) thin films have been grown on aluminum nitride (AlN) intermediate layers on (100) Si substrates by RF magnetron sputtering technique. Profilometry, four-point probe method, Rutherford backscattering spectroscopy (RBS) and Fourier transform infrared (FTIR) were employed to characterize the as-deposited SiC thin films. Test structures have been developed to investigate the piezoresistive properties. These structures consist of SiC thin-film resistors on AlN/Si substrates defined by reactive ion etching (RIE) with Ti/Au pads formed by lift-off process. Gauge factor (GF) and temperature coefficient of resistance (TCR) measurements have been performed and demonstrated the potential of these resistors to be used as sensing elements in devices for high temperature application.

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