A simple method for synthesizing VO2 with almost coincident hysteresis loops on Si substrate containing TiO2 buffer layer

2021 ◽  
Vol 865 ◽  
pp. 158755
Author(s):  
Tan Zheng ◽  
Jingxin Sang ◽  
Zhiwei Hua ◽  
Liu Xu ◽  
Xiaofeng Xu ◽  
...  
2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.


2005 ◽  
Vol 20 (3) ◽  
pp. 726-733 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Hyoun-Ee Kim

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.


2011 ◽  
Vol 8 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Nelu Blaž ◽  
Andrea Marić ◽  
Goran Radosavljević ◽  
Nebojša Mitrović ◽  
Ibrahim Atassi ◽  
...  

This paper offers an effective, accurate, and simple method for permittivity and permeability determination of an LTCC (low temperature cofired ceramic) ferrite sample. The presented research can be of importance in the fields of ferrite component design and application, as well as for RF and microwave engineering. The characterization sample is a stack of LTCC tapes forming a toroid. Commercially available ferrite tape ESL 40012 was used and standard LTCC processing was applied for the sample fabrication. For the first time, the electrical properties of a ferrite toroid sample of ESL 40012 LTCC ferrite tape is presented at various frequencies. The electrical properties of LTCC ferrite materials, permittivity and specific resistivity, are shown in a frequency range from 10 kHz to 1 MHz using the capacitive method. The hysteresis properties of this material are also determined. B-H hysteresis loops were measured applying a maximum excitation of 2 kA/m and frequencies of 50 Hz, 500 Hz, and 1000 Hz. Permeability is determined in the frequency range from 10 kHz to 1 GHz and a characterization procedure is divided in two segments, for low and high frequencies. Low frequency measurements (from 10 kHz to 1 MHz) are performed using LCZ meter and discrete turns of wire, while a short coaxial sample holder and vector network analyzer were used for the higher frequency range (from 300 kHz to 1 GHz). In addition, another important factor required for the practical design of devices is presented, the temperature variation of the permeability dispersion parameters.


2014 ◽  
Vol 104 (24) ◽  
pp. 241605 ◽  
Author(s):  
Po-Hung Wu ◽  
Ying-Sheng Huang ◽  
Hung-Pin Hsu ◽  
Cheng Li ◽  
Shi-Hao Huang ◽  
...  

2007 ◽  
Vol 51 (5) ◽  
pp. 1732-1735 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Se-Hyun Kim ◽  
Dae-Young Moon ◽  
Woong-Sun Kim ◽  
Jong-Wan Park

2014 ◽  
Vol 35 (6) ◽  
pp. 727-731
Author(s):  
陈翔 CHEN Xiang ◽  
邢艳辉 XING Yan-hui ◽  
韩军 HAN Jun ◽  
霍文娟 HUO Wen-juan ◽  
钟林健 ZHONG Lin-jian ◽  
...  

2011 ◽  
Vol 9 (3-4) ◽  
pp. 550-553 ◽  
Author(s):  
H. Fang ◽  
Y. Takaya ◽  
S. Ohuchi ◽  
H. Miyake ◽  
K. Hiramatsu ◽  
...  

2003 ◽  
Vol 240 (2) ◽  
pp. 429-432 ◽  
Author(s):  
T. Yamaguchi ◽  
Y. Saito ◽  
C. Morioka ◽  
K. Yorozu ◽  
T. Araki ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document