Room temperature d0 ferromagnetism, zero dielectric loss and ac-conductivity enhancement in p-type Ag-doped SnO2 compounds

2021 ◽  
Vol 870 ◽  
pp. 159515 ◽  
Author(s):  
L. Chouhan ◽  
Shantanu Kumar Panda ◽  
S. Bhattacharjee ◽  
B. Das ◽  
A. Mondal ◽  
...  
2007 ◽  
Vol 60 (1) ◽  
pp. 6 ◽  
Author(s):  
Simon Schrödle ◽  
Gary Annat ◽  
Douglas R. MacFarlane ◽  
Maria Forsyth ◽  
Richard Buchner ◽  
...  

A study of the room-temperature ionic liquid N-methyl-N-ethylpyrrolidinium dicyanamide by dielectric relaxation spectroscopy over the frequency range 0.2 GHz ≤ ν ≤ 89 GHz has revealed that, in addition to the already known lower frequency processes, there is a broad featureless dielectric loss at higher frequencies. The latter is probably due to the translational (oscillatory) motions of the dipolar ions of the IL relative to each other, with additional contributions from their fast rotation.


2015 ◽  
Vol 119 (52) ◽  
pp. 29186-29192 ◽  
Author(s):  
Ruey-Chi Wang ◽  
Yu-Xian Lin ◽  
Jia-Jun Wu

2013 ◽  
Vol 6 (2) ◽  
pp. 023001 ◽  
Author(s):  
Mariko Koike ◽  
Eiji Shikoh ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Shinya Yamada ◽  
...  

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.


Energies ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 4524
Author(s):  
Amin Nozariasbmarz ◽  
Daryoosh Vashaee

Depending on the application of bismuth telluride thermoelectric materials in cooling, waste heat recovery, or wearable electronics, their material properties, and geometrical dimensions should be designed to optimize their performance. Recently, thermoelectric materials have gained a lot of interest in wearable electronic devices for body heat harvesting and cooling purposes. For efficient wearable electronic devices, thermoelectric materials with optimum properties, i.e., low thermal conductivity, high Seebeck coefficient, and high thermoelectric figure-of-merit (zT) at room temperature, are demanded. In this paper, we investigate the effect of glass inclusion, microwave processing, and annealing on the synthesis of high-performance p-type (BixSb1−x)2Te3 nanocomposites, optimized specially for body heat harvesting and body cooling applications. Our results show that glass inclusion could enhance the room temperature Seebeck coefficient by more than 10% while maintaining zT the same. Moreover, the combination of microwave radiation and post-annealing enables a 25% enhancement of zT at room temperature. A thermoelectric generator wristband, made of the developed materials, generates 300 μW power and 323 mV voltage when connected to the human body. Consequently, MW processing provides a new and effective way of synthesizing p-type (BixSb1−x)2Te3 alloys with optimum transport properties.


1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.


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