Structural, Magnetic and Electronic Properties of Dilute MnScN(001) Grown by RF Nitrogen Plasma Molecular Beam Epitaxy

2011 ◽  
Vol 1290 ◽  
Author(s):  
Costel Constantin ◽  
Kangkang Wang ◽  
Abhijit Chinchore ◽  
Han-Jong Chia ◽  
John Markert ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Saturation Magnetization ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Manganese Concentration ◽  
Scandium Nitride ◽  
Mn Concentration ◽  
Mn Doped

ABSTRACTThe structural, magnetic, and electronic properties of dilute Mn-doped scandium nitride thin films grown by radio frequency N-plasma molecular beam epitaxy are explored. The results indicate a small magnetization extending up to as high as 350K. There is a slight dependence on the manganese concentration, with the lower Mn concentration showing a larger saturation magnetization.

scholarly journals Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 54-57 ◽  
Author(s):  
J.F. Xu ◽  
P.M. Thibado ◽  
C. Awo-Affouda ◽  
R. Moore ◽  
V.P. LaBella
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atmospheric Oxygen ◽  
Mn Doped

scholarly journals Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
J. Chan ◽  
T. Fu ◽  
N. W. Cheung ◽  
J. Ross ◽  
N. Newman ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Optical Absorption ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Plasma ◽  
Absorption Characteristics

ABSTRACTCrystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

scholarly journals Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 87818-87830 ◽  
Author(s):  
S. S. Kushvaha ◽  
M. Senthil Kumar ◽  
A. K. Shukla ◽  
B. S. Yadav ◽  
Dilip K. Singh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Molecular Beam ◽  
High Vacuum ◽  
Nitrogen Plasma ◽  
Ultra High Vacuum ◽  
Laser Molecular Beam Epitaxy ◽  
Molecular Beam Epitaxy System ◽  
Optical And Electronic Properties

We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient.

scholarly journals Structural and magnetic phase transitions in chromium nitride thin films grown by rf nitrogen plasma molecular beam epitaxy

2017 ◽  
Vol 96 (10) ◽  
Author(s):  
Khan Alam ◽  
Steven M. Disseler ◽  
William D. Ratcliff ◽  
Julie A. Borchers ◽  
Rodrigo Ponce-Pérez ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Magnetic Phase ◽  
Nitrogen Plasma ◽  
Magnetic Phase Transitions ◽  
Chromium Nitride

A study of the grain size and electric properties of Mn-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy

2009 ◽  
Vol 6 (6) ◽  
pp. 1468-1471 ◽  
Author(s):  
Hung-Ji Lin ◽  
Der-Yuh Lin ◽  
Jia-Zheng Hong ◽  
Chu-Shou Yang ◽  
Chih-Ming Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electric Properties ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films

2015 ◽  
Vol 3 (8) ◽  
pp. 1830-1834 ◽  
Author(s):  
Daoyou Guo ◽  
Zhenping Wu ◽  
Yuehua An ◽  
Xiaojiang Li ◽  
Xuncai Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Epitaxial Thin Films ◽  
Laser Molecular Beam Epitaxy ◽  
Mn Doped

Mn-doped monoclinic β-(Ga1−xMnx)2O3 thin films were epitaxially grown on α-Al2O3 (0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular beam epitaxy technique.

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam
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