Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature

2012 ◽  
Vol 347 (1) ◽  
pp. 77-81 ◽  
Author(s):  
D. Vazquez-Cortas ◽  
S. Shimomura ◽  
M. Lopez-Lopez ◽  
E. Cruz-Hernandez ◽  
S. Gallardo-Hernandez ◽  
...  
Keyword(s):  
Optical Properties ◽  
Growth Temperature ◽  
Electrical And Optical Properties ◽  
Si Doped

Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films

2013 ◽  
Vol 24 (7) ◽  
pp. 2541-2547 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
C. Mukherjee ◽  
P. Mishra ◽  
M. Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Growth Temperature ◽  
Ion Beam ◽  
Zno Thin Films ◽  
Electrical And Optical Properties

Diffusion of P- and N-Type Dopants in GaAs/AIGaAs DH Structure Grown by MOCVD

1991 ◽  
Vol 240 ◽  
Author(s):  
N. Ogasawara ◽  
S. Karakida ◽  
M. Miyashita ◽  
N. Hayafuji ◽  
M. Tsugami ◽  
...  
Keyword(s):  
Optical Properties ◽  
Mass Spectroscopy ◽  
Laser Diodes ◽  
Doping Profile ◽  
Electrical And Optical Properties ◽  
Si Doped ◽  
And Control ◽  
Cladding Layers ◽  
Secondary Ion ◽  
Undoped Gaas

ABSTRACTMost of AIGaAs laser diodes (LDs) contain the doublehetero (DH) structure. The DH structure consists of AIGaAs layers with high Al composition as cladding layers and undoped GaAs or AIGaAs with low Al composition. Therefore, it is important for improvement of device characteristics to understand and control the diffusion of dopants. However, most work on the diffusion of dopants have been carried out on the diffusion in GaAs. In this paper, we compared electrical and optical properties of Si-doped AIGaAs with those of Se-doped AIGaAs and investigated the diffusion of Si, Se and Zn in the GaAs/Al0.48Ga0.52As DH structure by secondary ion mass spectroscopy (SIMS). Doping profile of Si is controllable rather than that of Se. However, from the viewpoint of device characteristics, Se is more suitable than Si.

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