Diffusion of P- and N-Type Dopants in GaAs/AIGaAs DH Structure Grown by MOCVD

ABSTRACTMost of AIGaAs laser diodes (LDs) contain the doublehetero (DH) structure. The DH structure consists of AIGaAs layers with high Al composition as cladding layers and undoped GaAs or AIGaAs with low Al composition. Therefore, it is important for improvement of device characteristics to understand and control the diffusion of dopants. However, most work on the diffusion of dopants have been carried out on the diffusion in GaAs. In this paper, we compared electrical and optical properties of Si-doped AIGaAs with those of Se-doped AIGaAs and investigated the diffusion of Si, Se and Zn in the GaAs/Al0.48Ga0.52As DH structure by secondary ion mass spectroscopy (SIMS). Doping profile of Si is controllable rather than that of Se. However, from the viewpoint of device characteristics, Se is more suitable than Si.

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Effects of As Doping on Properties of ZnO Films

MRS Proceedings ◽

10.1557/proc-692-h11.8.1 ◽

2001 ◽

Vol 692 ◽

Author(s):

K. S. Huh ◽

D. K. Hwang ◽

K. H. Bang ◽

M. K. Hong ◽

D. H. Lee ◽

...

Keyword(s):

Optical Properties ◽

Secondary Ion Mass Spectrometry ◽

Annealing Treatment ◽

Zno Films ◽

X Ray Diffraction ◽

Electrical And Optical Properties ◽

As Doping ◽

Dopant Atoms ◽

Increasing Temperature ◽

Secondary Ion

AbstractA series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

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Electrical and optical properties of Si-doped indium tin oxides as transparent electrode and anti-reflection coating for solar cells

Current Applied Physics ◽

10.1016/j.cap.2015.04.005 ◽

2015 ◽

Vol 15 (7) ◽

pp. 794-798 ◽

Cited By ~ 4

Author(s):

Gyujin Oh ◽

Kyoung Su Lee ◽

Eun Kyu Kim

Keyword(s):

Optical Properties ◽

Solar Cells ◽

Transparent Electrode ◽

Electrical And Optical Properties ◽

Tin Oxides ◽

Si Doped

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Structural, electrical and optical properties of Si doped ZnO films grown by atomic layer deposition

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-012-0713-x ◽

2012 ◽

Vol 23 (11) ◽

pp. 2075-2081 ◽

Cited By ~ 13

Author(s):

Hai Yuan

Keyword(s):

Optical Properties ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Zno Films ◽

Electrical And Optical Properties ◽

Layer Deposition ◽

Si Doped ◽

Doped Zno

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Effect of ratio on the electrical and optical properties of Si-doped AlGaInP grown by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(94)00581-8 ◽

1995 ◽

Vol 148 (1-2) ◽

pp. 13-16 ◽

Cited By ~ 4

Author(s):

Qingxuan Yu ◽

Peng Raiwu ◽

Li Cuiyun

Keyword(s):

Optical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Electrical And Optical Properties ◽

Si Doped ◽

Metalorganic Chemical

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ITO-Based Cathode for Application in Semitransparent Organic Photovoltaic Cells

MRS Proceedings ◽

10.1557/proc-1013-z02-08 ◽

2007 ◽

Vol 1013 ◽

Cited By ~ 1

Author(s):

Ging-Meng Ng ◽

Elizabeth Lekha Kietzke ◽

Thomas Kietzke ◽

Li-Wei Tan ◽

Pooi-Kwan Liew ◽

...

Keyword(s):

Optical Properties ◽

Calcium Oxide ◽

Mass Spectroscopy ◽

High Performance ◽

Fill Factor ◽

Photovoltaic Cells ◽

Organic Photovoltaic ◽

Tof Sims ◽

Secondary Ion ◽

Sims Depth Profile

AbstractA high performance semitransparent cathode is one of the major impediments to the high performance semitransparent and tandem organic photovoltaic (OPV) cells. In this work, we discuss the possible designs of semitransparent cathode to improve the performance of semitransparent OPV cells. The optical properties of the poly(3-hexylthiophene) (P3HT): 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 (PCBM)-based OPV cells were studied by the optical admittance analysis. The performance of the OPV cells made with an opaque Ca(10nm)/Ag(100nm) cathode and a semitransparent Ca(10nm)/Ag(10nm)/ITO cathode are discussed. The interfacial properties at the cathode/organic interface were analyzed using the time-of-flight secondary ion mass spectroscopy (TOF-SIMS). The TOF-SIMS depth profile revealed that calcium oxide formed at the Ca/organic interface in semitransparent OPV cells, which was induced by the ITO sputtering process. It shows that the presence of calcium oxide at the organic/cathode interface could be the main reason resulting in a poor fill factor of a semitransparent OPV cell (∼23%) as compared to that of a reference cell (∼43%).

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