Within the scope of the comprehensive elucidation of the entire process chain for the production of highly functional thin films made of semiconducting aluminum-doped zinc oxide ( A Z O ) nanocrystals, this work deals with the detailed investigation of the stabilization sub-process, considering the requirements for the subsequent coating process. An innovative investigation procedure using non-invasive small angle X-ray scattering ( S A X S ) is developed, enabling an evaluation of qualitative and quantitative dispersion stability criteria of sterically stabilized A Z O nanocrystals. On the one hand, qualitative criteria for minimizing layer inhomogeneities due to sedimentation as well as aggregate formation are discussed, enabling a high particle occupancy density. On the other hand, a procedure for determining the A Z O concentration using S A X S , both in the stable phase and in the non-stabilized phase, is demonstrated to provide a quantitative evaluation of the stabilization success, having a significant impact on the final layer thickness. The obtained insights offer a versatile tool for the precise stabilization process control based on synthesis process using S A X S to meet coating specific requirements and thus a successful integration into the entire process chain for the production of functional A Z O thin films.
High-Resolution X-Ray Scattering from Thin Films and Multilayers