scholarly journals The effect of laser energy density on the geometric characteristics, microstructure and corrosion resistance of Co-based coatings by laser cladding

2021 ◽  
Vol 15 ◽  
pp. 2405-2418
Author(s):  
Chen Cui ◽  
Meiping Wu ◽  
Xiaojin Miao ◽  
Yuling Gong ◽  
Zishuo Zhao
2019 ◽  
Vol 25 (9) ◽  
pp. 1506-1515 ◽  
Author(s):  
Pei Wei ◽  
Zhengying Wei ◽  
Zhne Chen ◽  
Jun Du ◽  
Yuyang He ◽  
...  

Purpose This paper aims to study numerically the influence of the applied laser energy density and the porosity of the powder bed on the thermal behavior of the melt and the resultant instability of the liquid track. Design/methodology/approach A three-dimensional model was proposed to predict local powder melting process. The model accounts for heat transfer, melting, solidification and evaporation in granular system at particle scale. The proposed model has been proved to be a good approach for the simulation of the laser melting process. Findings The results shows that the applied laser energy density has a significantly influence on the shape of the molten pool and the local thermal properties. The relative low or high input laser energy density has the main negative impact on the stability of the scan track. Decreasing the porosity of the powder bed lowers the heat dissipation in the downward direction, resulting in a shallower melt pool, whereas pushing results in improvement in liquid track quality. Originality/value The randomly packed powder bed is calculated using discrete element method. The powder particle information including particle size distribution and packing density is taken into account in placement of individual particles. The effect of volumetric shrinkage and evaporation is considered in numerical model.


2019 ◽  
Vol 48 (5) ◽  
pp. 506004
Author(s):  
刘孝谦 Liu Xiaoqian ◽  
骆 芳 Luo Fang ◽  
杜琳琳 Du Linlin ◽  
陆潇晓 Lu Xiaoxiao

1994 ◽  
Vol 336 ◽  
Author(s):  
P. Mei ◽  
G. B. Anderson ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
M. Hack ◽  
...  

ABSTRACTThe combination of a-Si low leakage pixel TFTs with poly-Si TFTs in peripheral circuits provides an excellent method for reducing the number of external connections to large-area imaging arrays and displays. To integrate the fabrication of the peripheral poly-Si TFTs with the a-Si pixel TFTs, we have developed a three-step laser process which enables selective crystallization of PECVD a-Si:H. X-ray diffraction and transmission electron microscopy show that the polycrystalline grains formed with this three-step process are similar to those crystallized by a conventional one step laser crystallization of unhydrogenated amorphous silicon. The grain size increases with increasing laser energy density up to a peak value of a few Microns. The grain size decreases with further increases in laser energy density. The transistor field effect mobility is correlated with the grain size, increasing gradually with laser energy density until reaching its maximum value. Thereafter, the transistors suffer from leakage through the gate insulators. A dual dielectric gate insulator has been developed for these bottom-gate thin film transistors to provide the correct threshold voltages for both a-Si and poly-Si TFTs.


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