A silicon-graphene-silicon transistor with an improved current gain

2022 ◽  
Vol 104 ◽  
pp. 127-130
Author(s):  
Chi Liu ◽  
Xu-Qi Yang ◽  
Wei Ma ◽  
Xin-Zhe Wang ◽  
Hai-Yan Jiang ◽  
...  
1985 ◽  
Vol 49 ◽  
Author(s):  
M. Ghannam ◽  
J. Nijs ◽  
R. De Keersmaecker ◽  
R. Mertens

AbstractFor the first time an operating heterojunction bipolar silicon transistor has been realized with phosphorous doped amorphous silicon (a-Si) emitter. The deposition of a-Si is a relatively simple technique. The current gain (β) of 14 at a base Gummel Number (G.N.) of 1.35 1013 s/cm4 is higher than that obtained with normal diffused emitter bipolar transistors with the same G.N. for the base. This adds a degree of freedom to the design of bipolar structures according to the compromise between base resistance and current gainCrucial points that have to be looked at further are interface recombination at the a-Si/c-Si transition and emitter resistance.


1979 ◽  
Vol 3 (4) ◽  
pp. 107
Author(s):  
A.B. Bhattacharyya ◽  
Subodh Jindal ◽  
Shankar Subramanian

1985 ◽  
Vol 21 (24) ◽  
pp. 1124 ◽  
Author(s):  
A. Cazarre ◽  
J. Tasselli ◽  
A. Marty ◽  
J.P. Bailbe ◽  
G. Rey
Keyword(s):  

1991 ◽  
Vol 27 (4) ◽  
pp. 335 ◽  
Author(s):  
M. Marso ◽  
G. Zwinge ◽  
D. Grützmacher ◽  
J. Hergeth ◽  
H. Beneking

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.


Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 575
Author(s):  
Qian Su ◽  
Xin Liu ◽  
Yan Li ◽  
Xiaosong Wang ◽  
Zhiqiang Wang ◽  
...  

Compensation is crucial in the inductive power transfer system to achieve load-independent constant voltage or constant current output, near-zero reactive power, higher design freedom, and zero-voltage switching of the driver circuit. This article proposes a simple, comprehensive, and innovative graphic design methodology for compensation topology to realize load-independent output at zero-phase-angle frequencies. Four types of graphical models of the loosely coupled transformer that utilize the ideal transformer and gyrator are presented. The combination of four types of models with the source-side/load-side conversion model can realize the load-independent output from the source to load. Instead of previous design methods of solving the equations derived from the circuits, the load-independent frequency, zero-phase angle (ZPA) conditions, and source-to-load voltage/current gain of the compensation topology can be intuitively obtained using the circuit model given in this paper. In addition, not limited to only research of the existing compensation topology, based on the design methodology in this paper, 12 novel compensation topologies that are free from the constraints of transformer parameters and independent of load variations are stated and verified by simulations. In addition, a novel prototype of primary-series inductor–capacitance–capacitance (S/LCC) topology is constructed to demonstrate the proposed design approach. The simulation and experimental results are consistent with the theory, indicating the correctness of the design method.


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