A study on electrical (dc/ac) conductivity and dielectric characteristics of quaternary Ge50In4Ga13Se33 chalcogenide thin films

2021 ◽  
Vol 566 ◽  
pp. 120892
Author(s):  
E.M. Assim ◽  
E.G. El-Metwally
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.


2021 ◽  
pp. 149621
Author(s):  
Correr Wagner ◽  
Messaddeq Sandra Helena ◽  
Douaud Alexandre ◽  
Messaddeq Younes

1995 ◽  
Vol 411 ◽  
Author(s):  
J. R. Kokan ◽  
R. A. Gerhardt

ABSTRACTImpedance Spectroscopy is being used to study the humidity sensitivity of porous silica thin films. The films are processed via a colloidal sol-gel method which leaves some remnant potassium and sodium. Previous work on bulk porous silica samples processed by the same method showed that the dielectric properties and ac conductivity were very sensitive to changes in humidity. The aim of this work was to determine if the same dependencies could be found in the thin films. The capacitance, dielectric loss, and ac conductivity of the films were measured in a controlled environment chamber from 20–80% RH for frequencies ranging from 10Hz–10MHz. In addition to characterizing films with varying amounts of residual alkali ions obtained through leaching, we have also measured films that were surface doped with controlled amounts of KCl, LiCl, or NaCl. Relative humidity dependencies in the films are not as dramatic as in the bulk samples. The reasons for this behavior are not yet clear, but may be associated with the porosity, thickness, and surface area of the films.


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