Upper-bound Frequency for Measuring mm-Wave-Band Dielectric Characteristics of Thin Films on Semiconductor Substrates

1998 ◽  
Vol 37 (Part 1, No. 1) ◽  
pp. 210-214 ◽  
Author(s):  
Kenji Ikuta ◽  
Yohtaro Umeda ◽  
Yasunobu Ishii
Keyword(s):  
Thin Films ◽  
Upper Bound ◽  
Wave Band ◽  
Dielectric Characteristics ◽  
Semiconductor Substrates

scholarly journals Переключение поляризации вдоль подложки в тонких пленках Bi-=SUB=-4-=/SUB=-Ti-=SUB=-3-=/SUB=-O-=SUB=-12-=/SUB=- при различных деформационных напряжениях

2020 ◽  
Vol 90 (1) ◽  
pp. 128
Author(s):  
В.М. Мухортов ◽  
Д.В. Стрюков ◽  
С.В. Бирюков ◽  
Ю.И. Головко
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Domain Structure ◽  
Spontaneous Polarization ◽  
Unit Cell ◽  
Interface Plane ◽  
Dielectric Characteristics ◽  
Unit Cells ◽  
Mgo Substrate

A study of epitaxial Bi4Ti3O12 thin films with a pre-deposited 4 nm Ba0.4Sr0.6TiO3 sublay-er on (001) MgO substrates has been performed. In the obtained heterostructures, the rotation of the Bi4Ti3O12 film unit cells by an angle of 45° relative to the MgO substrate unit cell in the inter-face plane has been observed. The Bi4Ti3O12 films contain unit cell deformations depending on the thickness of the film and the sign of the deformation changes at a thickness of ~40 nm. The switchable in-plane spontaneous polarization of Bi4Ti3O12 film at the 180° domain structure oc-curs at a film thickness of 10 nm and increases with a thickness up to 54 µC/cm2. The study of the dielectric characteristics of the films confirmed the existence of properties anisotropy in the interface plane and the effect of deformation of the unit cell on the properties of heterostruc-tures.

THE INFLUENCE OF SYNTHESIZING TEMPERATURES ON THE PROPERTIES OF THE Cu/Sn/ZnS PRECURSOR THIN FILMS

2015 ◽  
Vol 22 (01) ◽  
pp. 1550009
Author(s):  
YA MING SUN ◽  
DONG LONG ◽  
XIANG CHENG MENG ◽  
ZHONG HUA ◽  
BO LI ◽  
...  
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Wave Band ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Different Temperatures ◽  
Microstructure Morphology ◽  
Uv Visible ◽  
Precursor Thin Film

Cu 2 ZnSnS 4 thin films were prepared on soda-lime glass by sulfurization of the Cu / Sn / ZnS precursors. The microstructure, morphology and optical properties of the films were investigated by X-ray diffraction (XRD), Raman scattering (Raman), scanning electron microscopy (SEM) and UV-visible spectrophotometer (UV-Vis). The SEM images of the precursor and the thin films annealed at different temperatures are very different due to their different surface products. The absorption spectrum shifts to high-wave band region with increasing annealing temperatures. The precursor thin film annealed at 500°C for 2 h forms a single CZTS phase with kesterite structure and the bandgap is estimated to be 1.54 eV.

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