Enhancement of magnetic moment of Er-implanted ZnO films by post-annealing in Ar and vacuum

2022 ◽  
Vol 306 ◽  
pp. 130901
Author(s):  
Qian Li ◽  
Heng Yuan ◽  
Mengdi Zhang ◽  
Weiqing Yan ◽  
Bin Liao ◽  
...  
Keyword(s):  
Magnetic Moment ◽  
Zno Films ◽  
Post Annealing

scholarly journals High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

AIP Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 015015 ◽  
Author(s):  
Jian Gao ◽  
Wen-Jun Liu ◽  
Shi-Jin Ding ◽  
Hong-Liang Lu ◽  
David Wei Zhang
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
Atomic Layer ◽  
Zno Films ◽  
Post Annealing ◽  
Ultraviolet Photodetectors

Microstructure of ZnO films synthesized on MgAl2O4 from low-temperature aqueous solution: growth and post-annealing

2012 ◽  
Vol 48 (4) ◽  
pp. 1614-1622 ◽  
Author(s):  
Boris Nijikovsky ◽  
Jacob J. Richardson ◽  
Magnus Garbrecht ◽  
Steven P. DenBaars ◽  
Wayne D. Kaplan
Keyword(s):  
Aqueous Solution ◽  
Low Temperature ◽  
Solution Growth ◽  
Zno Films ◽  
Post Annealing

Non-volatile, reversible switching of the magnetic moment in Mn-doped ZnO films

2013 ◽  
Vol 113 (17) ◽  
pp. 17C301 ◽  
Author(s):  
X. L. Wang ◽  
Q. Shao ◽  
C. W. Leung ◽  
A. Ruotolo
Keyword(s):  
Magnetic Moment ◽  
Zno Films ◽  
Doped Zno ◽  
Mn Doped

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

2012 ◽  
Vol 503-504 ◽  
pp. 350-353
Author(s):  
Mao Nan ◽  
Chun Yang Kong ◽  
Guo Ping Qin ◽  
Hai Bo Ruan
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Powder Target ◽  
Post Annealing ◽  
P Type

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

Enhancement of magnetic moment of Co-doped ZnO films by postannealing in vacuum

2008 ◽  
Vol 103 (2) ◽  
pp. 023911 ◽  
Author(s):  
Xiao-Li Li ◽  
Zhu-Liang Wang ◽  
Xiu-Fang Qin ◽  
Hai-Shun Wu ◽  
Xiao-Hong Xu ◽  
...  
Keyword(s):  
Magnetic Moment ◽  
Zno Films ◽  
Doped Zno ◽  
Co Doped

The Post-Annealing Effects of N-Doped ZnO Films Deposited by the Atomic Layer Deposition

2012 ◽  
pp. 101-106
Author(s):  
Kwang Seok Jeong ◽  
Yu Mi Kim ◽  
Ho Jin Yun ◽  
Seung Dong Yang ◽  
Sang Youl Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Post Annealing ◽  
Layer Deposition ◽  
Annealing Effects ◽  
Doped Zno

Influence of post-annealing treatment on the structure properties of ZnO films

2005 ◽  
Vol 241 (3-4) ◽  
pp. 303-308 ◽  
Author(s):  
Z.B. Fang ◽  
Z.J. Yan ◽  
Y.S. Tan ◽  
X.Q. Liu ◽  
Y.Y. Wang
Keyword(s):  
Annealing Treatment ◽  
Zno Films ◽  
Post Annealing ◽  
Structure Properties

Effect of rapid thermal treatments on the physical properties of Cobalt Doped ZnO Films

MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 163-168
Author(s):  
C. Davesnne ◽  
C. Frilay ◽  
P. Marie ◽  
C. Labbé ◽  
F. Ehre ◽  
...  
Keyword(s):  
Lattice Parameter ◽  
Annealing Duration ◽  
Zno Films ◽  
Thermal Treatments ◽  
Si Substrates ◽  
Post Annealing ◽  
The Matrix ◽  
The Mean ◽  
Doped Zno ◽  
P Type

ABSTRACTCobalt doped ZnO (ZnO:Co) films with a 1 at% doping rate have been successfully grown on (100) oriented p type Si substrates by radiofrequency magnetron sputtering. Post annealing treatments at 973 K for various short periods have been carried out and structural, optical and electrical properties of the films have been investigated. Upon rapid annealing, the dopant distribution in the film has been found homogeneous. The annealing improves the (002) texture of the film and the mean column width increases with the annealing duration from 60 nm up to 95 nm. The lattice parameter of the ZnO:Co films decreases upon annealing and approaches that of bulk ZnO. The photoluminescence (PL) study reveals that the Co2+ ions can be excited directly or through a transfer mechanism from the matrix. The PL intensity decreases with the annealing time suggesting a diffusion process of the dopant impeding the Co2+ emission. At last, the electrical conductivity reaches values compatible with potential electroluminescent applications of the ZnO:Co films.

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