Series resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature range

ABSTRACTThe temperature dependence of the in-plane C11 C22. C12 and C66 modes between 80 and 260 K of superconducting crystals of Bi2Sr2Ca1Cu208 have been obtained via the measurements of ultrasonic-velocities. The anisotropic elasticity in the a-b plane of single crystal Bi2 Sr2Ca1Cu2O8 is manifest. The shear modulus of sound propagation along the [110] with the polarization has been also calculated and shows an overall trend of softening over a wide temperature range above Tc. The shear modulus C6 6 shows three obvious softening minima around 240–250 K, 150 K and 100 K.

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Study on Thermal Hysteresis of Elastic Modulus in Granular Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O

MRS Proceedings ◽

10.1557/proc-195-321 ◽

1990 ◽

Vol 195 ◽

Author(s):

Yening Wang ◽

Linhai Sun ◽

Jin Wu ◽

Min Gu

Keyword(s):

Elastic Modulus ◽

Single Crystal ◽

Pore Size ◽

Wide Temperature Range ◽

Thermal Hysteresis ◽

Coarse Grained ◽

First Order ◽

Temperature Range

ABSTRACTA large thermal hysteresis ( > 100 K) of elastic modulus was measured for coarse grained Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O. Whereas, only a small thermal hysteresis (2∼3 K) near the velocity minima at 240 K, and 150 K was observed in Bi2 Sr2 CaCu2 O8 single crystal, which were found to be associated with phaselike transitions (PLT). The investigations of isothermal recovery of modulus for coarse grained YBCO and BSCCO disclose that the large thermal hysteresis may be attributed to the defects of pore size generated in the interconnecting region between grains as a result of PLT of weak first order but covering a wide temperature range. The mechanism of a large thermal hysteresis for coarse grained samples has been discussed in detail.

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Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

Materials ◽

10.3390/ma14205909 ◽

2021 ◽

Vol 14 (20) ◽

pp. 5909

Author(s):

Hicham Helal ◽

Zineb Benamara ◽

Mouhamed Amine Wederni ◽

Sabrine Mourad ◽

Kamel Khirouni ◽

...

Keyword(s):

Barrier Height ◽

Wide Temperature Range ◽

Series Resistance ◽

Schottky Diodes ◽

Reverse Current ◽

Schottky Contacts ◽

Temperature Range ◽

Tunnel Mechanism ◽

Nitridation Process

Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current Iinv increments from 1 × 10−7 A at 80 K to about 1 × 10−5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01 at 420 K. The barrier height qϕb grows abnormally from 0.46 eV at 80 K to 0.83 eV at 420 K. The tunnel mechanism TFE effect is the responsible for the qϕb behavior. The series resistance Rs is very low, decreasing from 13.80 Ω at 80 K to 4.26 Ω at 420 K. These good results are due to the good quality of the interface treated by the nitridation process. However, the disadvantage of the nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.

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Features of the photoconductivity of the quasi-one-dimensional compound TiS3

Nonlinear World ◽

10.18127/j20700970-202102-08 ◽

2021 ◽

Author(s):

S.A. Nikonov ◽

I.G. Gorlova ◽

S.G. Zybtsev ◽

V.Ya. Pokrovskii

Keyword(s):

Phase Transitions ◽

Single Crystal ◽

Wide Temperature Range ◽

Direct Evidence ◽

Nonlinear Conductivity ◽

One Dimensional ◽

Temperature Range ◽

Near Ir ◽

Linear And Nonlinear ◽

Magnetic Conductivity

Problem formulating. The features of linear and nonlinear conductivity, magnetic conductivity, thermopower, and the Hall effect observed on TiS3 whiskers indicate phase transitions to a state of CDW in this compound, but there is no direct evidence yet. The study of photoconductivity would allow us to learn more about the nature of these phase transitions. Goal. Study of the effect of radiation in the range from near-IR to near-UV on the conductivity of single-crystal TiS3 whiskers at 4.2 <T<300 K and search for features of photoconductivity in the temperature range of the suggested phase transitions. Result. Features of the photoconductivity of TiS3 at temperatures of 50 K and 15 K, at which the −dlnσ/d(1/T) maxima were previously observed, are found. A decrease in photoconductivity at these temperatures indicates a change in the electronic spectrum, which may be associated with the formation of CDW. Practical meaning. In the case of developing TiS3-based photosensors, it is important to study the photoconductivity in a wide temperature range.

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Thermal stimulated current response in cupric oxide single crystal thin films over a wide temperature range

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/50/3/035303 ◽

2016 ◽

Vol 50 (3) ◽

pp. 035303

Author(s):

Kungan Yang ◽

Shuxiang Wu ◽

Fengmei Yu ◽

Wenqi Zhou ◽

Yunjia Wang ◽

...

Keyword(s):

Thin Films ◽

Single Crystal ◽

Wide Temperature Range ◽

Cupric Oxide ◽

Current Response ◽

Temperature Range

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Electro-caloric effect in a BCZT single crystal

CrystEngComm ◽

10.1039/c7ce02040f ◽

2018 ◽

Vol 20 (11) ◽

pp. 1597-1602 ◽

Cited By ~ 2

Author(s):

Donglin Liu ◽

Qiang Li ◽

Qingfeng Yan

Keyword(s):

Curie Temperature ◽

Single Crystal ◽

Wide Temperature Range ◽

Temperature Range ◽

Caloric Effect

The electro-caloric effect of the [001]-oriented (Ba,Ca)(Zr,Ti)O3 (BCZT) single crystal was investigated in a wide temperature range from −100 °C to Curie temperature (122 °C).

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