Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(111) and (001) Schottky contacts

2011 ◽  
Vol 88 (5) ◽  
pp. 605-609 ◽  
Author(s):  
Tsuyoshi Nishimura ◽  
Osamu Nakatsuka ◽  
Shingo Akimoto ◽  
Wakana Takeuchi ◽  
Shigeaki Zaima
2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.


2020 ◽  
Vol 35 (7) ◽  
pp. 075016
Author(s):  
Miguel Tibério ◽  
Tomás Calmeiro ◽  
Suman Nandy ◽  
Daniela Nunes ◽  
Rodrigo Martins ◽  
...  

2009 ◽  
Vol 95 (3) ◽  
pp. 761-767 ◽  
Author(s):  
Wenwei Ge ◽  
Hong Liu ◽  
Xiangyong Zhao ◽  
Xiaobing Li ◽  
Xiaoming Pan ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document