Band offsets and electrical stability characterization of Zr-doped ZnO thin-film transistors with a Gd2O3 gate insulator

2014 ◽  
Vol 118 ◽  
pp. 20-24 ◽  
Author(s):  
Hsien-Chin Chiu ◽  
Hsiang-Chun Wang ◽  
Yi-Cheng Luo ◽  
Fan-Hsiu Huang ◽  
Hsuan-Ling Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Electrical Stability ◽  
Band Offsets ◽  
Doped Zno

Studies on Al-doped ZnO thin-film transistors with Pb(Zr0.3Ti0.7)O3 gate insulator

2011 ◽  
Vol 125 (1) ◽  
pp. 162-167
Author(s):  
Z. H. Chen ◽  
X. B. Liu ◽  
M. C. Chen ◽  
H. H. Yu ◽  
A. Q. Jiang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Doped Zno

Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

2010 ◽  
Vol 13 (4) ◽  
pp. H101 ◽  
Author(s):  
Mamoru Furuta ◽  
Takashi Nakanishi ◽  
Mutsumi Kimura ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bottom Gate ◽  
Effect Of Surface

Effect of Double-Layered Al[sub 2]O[sub 3] Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

2010 ◽  
Vol 13 (8) ◽  
pp. H264 ◽  
Author(s):  
Sung-Min Yoon ◽  
Sang-Hee Ko Park ◽  
Shin-Hyuk Yang ◽  
Chun-Won Byun ◽  
Chi-Sun Hwang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bias Stability

Synthesis and characterization of In doped ZnO thin film as efficient transparent conducting oxide candidate

Optik ◽  
2018 ◽  
Vol 166 ◽  
pp. 317-322 ◽  
Author(s):  
Abdelhamid Bouaine ◽  
Amira Bourebia ◽  
Hassan Guendouz ◽  
Zineb Riane
Keyword(s):  
Thin Film ◽  
Transparent Conducting Oxide ◽  
Synthesis And Characterization ◽  
Zno Thin Film ◽  
Transparent Conducting ◽  
Doped Zno

Investigation on the Electrical Stability of 5,11-Bis(triethylsilylethynyl)anthradithiophene Thin-Film Transistors

2021 ◽  
Vol 21 (3) ◽  
pp. 1754-1760
Author(s):  
Joel Ndikumana ◽  
Jyothi Chintalapalli ◽  
Jin-Hyuk Kwon ◽  
Jin-Hyuk Bae ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Ambient Air ◽  
Gate Insulator ◽  
Hydroxyl Groups ◽  
Electrical Stability ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Domain Boundaries

We investigate the effects of environmental conditions on the electrical stability of spin-coated 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) thin-film transistors (TFTs) in which crosslinked poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA) was utilized as a gate insulator layer. Atomic force microscopy observations show molecular terraces with domain boundaries in the spin-coated TEST-ADT semiconductor film. The TFT performance was observed to be superior in the ambient air condition. Under negative gate-bias stress, the TES-ADT TFTs showed a positive threshold voltage shift in ambient air and a negative threshold voltage shift under vacuum. These results are explained through a chemical reaction between water molecules in air and unsubstituted hydroxyl groups in the cross-linked PVP-co-PMMA as well as a charge-trapping phenomenon at the domain boundaries in the spin-coated TES-ADT semiconductor.

High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

2013 ◽  
Vol 11 (8) ◽  
pp. 1509-1512 ◽  
Author(s):  
Dedong Han ◽  
Jian Cai ◽  
Wei Wang ◽  
Liangliang Wang ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
High K ◽  
Doped Zno
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