Fabrication of Cu–Zr–Ti thick film metallic glass structure by double metal mask lift-off process

2015 ◽  
Vol 135 ◽  
pp. 45-51 ◽  
Author(s):  
Shigetaka Watanabe ◽  
Junpei Sakurai ◽  
Seiichi Hata
Keyword(s):  
Metallic Glass ◽  
Thick Film ◽  
Glass Structure ◽  
Metal Mask ◽  
Lift Off

Reverse Lift-Off Process and Application for Cu-Zr-Ti Metallic Glass Thick Film Structures

2015 ◽  
Vol 9 (6) ◽  
pp. 646-654 ◽  
Author(s):  
Shigetaka Watanabe ◽  
◽  
Junpei Sakurai ◽  
Mizue Mizoshiri ◽  
Seiichi Hata
Keyword(s):  
Amorphous Alloy ◽  
Metallic Glass ◽  
Thick Film ◽  
Cross Section ◽  
Rectangular Cross Section ◽  
Film Structure ◽  
Sputter Deposition ◽  
Uniform Thickness ◽  
Target Structure ◽  
Lift Off

In technologies involving micro electromechanical systems, lift-off processes combined with sputter deposition are general patterning methods for the formation of amorphous alloy thick film structures. However, the thicknesses of structures fabricated in this manner are not uniform because sputtered particles are blocked by the sidewalls of the lift-off layer. In this paper, a reverse lift-off process is proposed as a new patterning method for fabricating amorphous alloy thick film structures of uniform thickness. In the reverse lift-off process, a template of the desired structure is formed on top of the chosen substrate. The thick film structure is then formed by sputter deposition on the top surface of the template. In contrast to a conventional lift-off process, here the thickness of the structure is uniform because there is nothing to hinder the sputtered particles. To demonstrate this process, we successfully fabricated a Cu-Zr-Ti metallic glass thick film structure with a uniform film thickness and a rectangular cross section across different target structure widths and thicknesses. This demonstrates that the reverse lift-off process is more suitable than conventional lift-off processes for the fabrication of metallic glass thick film structures.

Micro-patterning of PZT thick film by lift-off using ZnO as a sacrificial layer

2015 ◽  
Vol 41 (6) ◽  
pp. 7325-7328 ◽  
Author(s):  
Junhong Li ◽  
Wei Ren ◽  
Chenghao Wang ◽  
Mengwei Liu ◽  
Guoxiang Fan
Keyword(s):  
Thick Film ◽  
Sacrificial Layer ◽  
Micro Patterning ◽  
Lift Off ◽  
Pzt Thick Film

OS2-2-5 Thick Film Patterning by Lift-off Process of Electroformed Metal

2012 ◽  
Vol 2012.4 (0) ◽  
pp. 151-152
Author(s):  
Takuya Hagiyama ◽  
Tso-Fu Mark Chang ◽  
Masato Sone ◽  
Seiichi Hata
Keyword(s):  
Thick Film ◽  
Lift Off

Investigation of bulk metallic glass structure by means of electron irradiation

2009 ◽  
Vol 17 (4) ◽  
pp. 246-248 ◽  
Author(s):  
Yuri Petrusenko ◽  
Alexander Bakai ◽  
Valeriy Borysenko ◽  
Aleksandr Astakhov ◽  
Dmitro Barankov
Keyword(s):  
Metallic Glass ◽  
Bulk Metallic Glass ◽  
Electron Irradiation ◽  
Glass Structure

scholarly journals Cooling rate dependence of simulated Cu64.5Zr35.5 metallic glass structure

2016 ◽  
Vol 145 (3) ◽  
pp. 034506 ◽  
Author(s):  
R. E. Ryltsev ◽  
B. A. Klumov ◽  
N. M. Chtchelkatchev ◽  
K. Yu. Shunyaev
Keyword(s):  
Metallic Glass ◽  
Cooling Rate ◽  
Glass Structure ◽  
Rate Dependence

Ruthenium clusters in lead-borosilicate glass in thick film resistors

1994 ◽  
Vol 9 (7) ◽  
pp. 1866-1878 ◽  
Author(s):  
Kenji Adachi ◽  
Sadahiro lida ◽  
Kazuhide Hayashi
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Thick Film ◽  
Borosilicate Glass ◽  
Glass Structure ◽  
Glass Network ◽  
High Energy ◽  
Ruthenium Dioxide ◽  
Ruthenium Clusters ◽  
Aluminum Ions

An interparticle glass matrix in ruthenium dioxide-based thick film resistors has been studied intensively by means of analytical and high resolution transmission electron microscopy. The ruthenium dioxide phase interacts with lead-borosilicate glass at high temperature by dissolving ruthenium ions and incorporating a small number of lead and aluminum ions on the surface. Ruthenium ions diffuse through the glass network at least over a distance of 1 μm during firing, but are accommodated in the glass structure by an amount only less than 7 at. % at room temperature. High resolution electron microscopy reveals numerous ruthenium-pyrochlore crystallites in high-lead glasses, but hardly any Ru-based clusters/crystallites in low-lead glasses, where lead-rich glass clusters due to glass immiscibility and reduced lead metal clusters are more commonly observed instead of ruthenium clusters. Lead oxide is prone to reduction both in high- and low-lead glasses upon irradiating with a high-energy incident electron beam. Comparison with gold-based resistor and estimation of average dispersion length of ruthenium clusters, 2 to 4 nm, prefer the model of electron hopping via ruthenium clusters/crystallites as a dominant conduction mechanism in thick film resistors.

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