Charging effects of SiO2 thin film on Si substrate irradiated by penetrating electron beam

Micron ◽  
2021 ◽  
Vol 140 ◽  
pp. 102961 ◽  
Author(s):  
Wei-Qin Li ◽  
Chao-Yi Mu
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Si Substrate ◽  
Sio2 Thin Film

Effect of seed layers (Al, Ti) on optical and morphology of Fe-doped ZnO thin film nanowires grown on Si substrate via electron beam evaporation

2017 ◽  
Vol 71 ◽  
pp. 296-303 ◽  
Author(s):  
I. Neelakanta Reddy ◽  
Ch.Venkata Reddy ◽  
M. Sreedhar ◽  
Migyung Cho ◽  
Jaesool Shim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Doped Zno ◽  
Seed Layers

Physical Behavior of Fluorine Atoms in the Fabricated Transparent SiO2 Thin Film at Room Temperature

1998 ◽  
Vol 555 ◽  
Author(s):  
H lizuka ◽  
M Murahara
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Photochemical Reaction ◽  
Oxidation Reaction ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Reaction Chamber ◽  
Si Substrate ◽  
Physical Behavior ◽  
Sio2 Thin Film

AbstractThis paper describe the growth of a transparent SiO2 thin film performed by using Xe2• excimer lamp at room temperature. In this study, NF., and O2 mixture gases was employed as a reaction gas. A silicon substrate was placed in a reaction chamber, which was filled with NF3 and O2 mixture gases. The mixture gases were exposed to the Xe2• excimer lamplight, and SiF4 and NO2 gases were produced by photochemical reaction. Subsequently SiF4 adsorbed onto the Si substrate. SiO2 was formed by oxidation reaction between SiF4 and NO2. These processes occur spontaneously, and SiO2 film is grown. The refractive index of fabrication SiO2 thin film is 1.32. By annealing at 200°C, the refractive index of this filn was increased to 1.44. Further increase in the annealing temperature, resulted in a higher refractive index and lower density of fluorine atoms.

Electronic characterization of Si/SiO2 structure using photo-CVD SiO2 thin film on atomically flat Si substrate

1998 ◽  
Vol 130-132 ◽  
pp. 214-220 ◽  
Author(s):  
Osamu Maida ◽  
Hideaki Yamamoto ◽  
Norio Okada ◽  
Takeshi Kanashima ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Sio2 Thin Film ◽  
Atomically Flat

Study of the optical properties of SiO2, and Al2O3 films deposited by electron beam technique

2015 ◽  
Vol 9 (3) ◽  
pp. 2453-2460 ◽  
Author(s):  
Reza Shakouri
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
The Other ◽  
Sio2 Thin Film ◽  
Al2o3 Films ◽  
Beam Technique ◽  
Al2o3 Thin Film

Al2O3 and SiO2 thin films have been prepared by electron beam evaporation at different oxygen flows. The influences of oxygen partial pressure on optical properties of Al2O3and SiO2 thin films have been studied. We have coated Al2O3and SiO2 without some oxygen background in the chamber. The results show that Al2O3 thin film does not have absorption even though it is coated without oxygen background in the chamber. On the other hand, without oxygen flow, SiO2 thin film has some absorption.  The packing density of the samples is studied by change in the spectrum of a coating with humidity

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