Formation of almost delta-layered nanoparticles in SiO2 thin film on Si substrate by metal negative-ion implantation

2005 ◽  
Vol 237 (1-2) ◽  
pp. 422-427 ◽  
Author(s):  
Junzo Ishikawa ◽  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Takuya Matsumoto ◽  
Kazuya Ueno ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Negative Ion ◽  
Si Substrate ◽  
Sio2 Thin Film

Silver Negative-Ion Implantation into Thermally Grown Thin SiO2Film on Si Substrate and Heat Treatment for Formation of Silver Nanoparticles

2007 ◽  
Vol 46 (9B) ◽  
pp. 6260-6266 ◽  
Author(s):  
Nobutoshi Arai ◽  
Hiroshi Tsuji ◽  
Kouichirou Adachi ◽  
Hiroshi Kotaki ◽  
Yasuhito Gotoh ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Silver Nanoparticles ◽  
Ion Implantation ◽  
Negative Ion ◽  
Si Substrate ◽  
Thermally Grown

Characteristics of Molybdenum Nitride Thin Film by N2+ Ion Implantation

1999 ◽  
Vol 563 ◽  
Author(s):  
Dong Joon Kim ◽  
Ik-Soo Kim ◽  
Yong Tae Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Thermal Stability ◽  
Tensile Stress ◽  
Ion Implantation ◽  
Molybdenum Nitride ◽  
Si Substrate ◽  
Post Annealing ◽  
Thermal Stability Of

AbstractMolybdenum nitride thin films were prepared by N2+ implantation with acceleration energy of 20 keV and the ion dose of 3×1017 ions/cm2. The structural property and thermal stability of the films were investigated by XRD, AES, AFM and RBS. The crystal structure of N2+ implanted molybdenum thin films (Mo-N2+) which had microcrystalline state was transformed to γ-Mo2N phase with a preferred (111) orientation after a post-annealing at 500 °C for 30min. However, a silicide reaction was not observed even after the annealing at 700 °C, which is due to the modification of the interface between Mo thin film and Si substrate by N2+ implantation. Also, Cu diffusion did not seem to be induced by the annealing at 700 °C for 30 min. The internal stress of the Mo-N2+ thin films during post-annealing at 600 °C for 30min was found to change from highly compressive stress to low tensile stress.

Physical Behavior of Fluorine Atoms in the Fabricated Transparent SiO2 Thin Film at Room Temperature

1998 ◽  
Vol 555 ◽  
Author(s):  
H lizuka ◽  
M Murahara
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Photochemical Reaction ◽  
Oxidation Reaction ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Reaction Chamber ◽  
Si Substrate ◽  
Physical Behavior ◽  
Sio2 Thin Film

AbstractThis paper describe the growth of a transparent SiO2 thin film performed by using Xe2• excimer lamp at room temperature. In this study, NF., and O2 mixture gases was employed as a reaction gas. A silicon substrate was placed in a reaction chamber, which was filled with NF3 and O2 mixture gases. The mixture gases were exposed to the Xe2• excimer lamplight, and SiF4 and NO2 gases were produced by photochemical reaction. Subsequently SiF4 adsorbed onto the Si substrate. SiO2 was formed by oxidation reaction between SiF4 and NO2. These processes occur spontaneously, and SiO2 film is grown. The refractive index of fabrication SiO2 thin film is 1.32. By annealing at 200°C, the refractive index of this filn was increased to 1.44. Further increase in the annealing temperature, resulted in a higher refractive index and lower density of fluorine atoms.

Electronic characterization of Si/SiO2 structure using photo-CVD SiO2 thin film on atomically flat Si substrate

1998 ◽  
Vol 130-132 ◽  
pp. 214-220 ◽  
Author(s):  
Osamu Maida ◽  
Hideaki Yamamoto ◽  
Norio Okada ◽  
Takeshi Kanashima ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Sio2 Thin Film ◽  
Atomically Flat
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