Physical Behavior of Fluorine Atoms in the Fabricated Transparent SiO2 Thin Film at Room Temperature

1998 ◽  
Vol 555 ◽  
Author(s):  
H lizuka ◽  
M Murahara
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Photochemical Reaction ◽  
Oxidation Reaction ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Reaction Chamber ◽  
Si Substrate ◽  
Physical Behavior ◽  
Sio2 Thin Film

AbstractThis paper describe the growth of a transparent SiO2 thin film performed by using Xe2• excimer lamp at room temperature. In this study, NF., and O2 mixture gases was employed as a reaction gas. A silicon substrate was placed in a reaction chamber, which was filled with NF3 and O2 mixture gases. The mixture gases were exposed to the Xe2• excimer lamplight, and SiF4 and NO2 gases were produced by photochemical reaction. Subsequently SiF4 adsorbed onto the Si substrate. SiO2 was formed by oxidation reaction between SiF4 and NO2. These processes occur spontaneously, and SiO2 film is grown. The refractive index of fabrication SiO2 thin film is 1.32. By annealing at 200°C, the refractive index of this filn was increased to 1.44. Further increase in the annealing temperature, resulted in a higher refractive index and lower density of fluorine atoms.

Formation of Transparent SiO2 Thin Film at Room Temperature with Excimer Lamp Irradiation

1997 ◽  
Vol 495 ◽  
Author(s):  
T. Okamoto ◽  
H. Iizuka ◽  
S. Ito ◽  
M. Murahara
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Molecular Layer ◽  
Surface Current ◽  
Atomic Layer ◽  
Reaction Chamber ◽  
Surface Current Density ◽  
Excimer Lamp ◽  
Sio2 Thin Film ◽  
Mixed Gases

ABSTRACTA transparent SiO2 thin film was grown with Xe2* excimer lamp and NF3, O2 mixed gases at room temperature. Unlike the conventional methods such as atomic layer epitaxy (ALE) at low temperature, this method requires only a few minutes for deposition without changing material gases. A Si substrate was placed in a reaction chamber, which was filled with NF3 and O2 gases. The gases were exposed to the Xe2* excimer lamp light, and SiF4 and NO2 were produced by photochemical reaction. The SiF4 was adsorbed on the substrate; which reacted with NO2 in gas ambient and was oxidized to form SiO2. The molecular layer was produced per reaction, and by voluntarily repeated reaction, the transparent SiO2 thin film was grown. As a result, the SiO2 film thickness of about 2200 Å was achieved for 15 minutes at room temperature. By annealing the formed SiO2 film, the surface current density of the formed SiO2 decreased; the higher the annealing temperature became, the more the surface density decreased.

Annealing Time Influence on Optical Characteristic of Beta-FeSi2 Thin Film

2015 ◽  
Vol 1096 ◽  
pp. 62-68
Author(s):  
Xi Cheng Xiong ◽  
Shuang Shuang Kang ◽  
Qian Chen ◽  
Jin Huang ◽  
Quan Xie ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Annealing Time ◽  
Optical Characteristic ◽  
Annealing Temperature ◽  
Si Substrate ◽  
Direct Current Magnetron Sputtering ◽  
Digital Microscope

In this paper, we have prepared the beta-FeSi2 thin film on Si substrate through the direct current magnetron sputtering technology. We have tested the samples by XRD, optical digital microscope (ODM), spectrophotometer, and SEM. Under the same annealing temperature at 1153 K, the annealing time has important influence on the optical characteristic of beta-FeSi2 thin film. More the thickness of the beta-FeSi2 thin film is thinner, and more the absorptivity of photo is higher. We should use the thinner beta-FeSi2 thin film with appropriate value of the thickness and must adopt the anti-reflection layer to fabricate the solar cell.

Growth of Transparent SiO2 Thin Film on Silicon at Room Temperatüre by Using I72nm Xe2* Excimer Lamp

1996 ◽  
Vol 446 ◽  
Author(s):  
T. Suzuki ◽  
M. Murahara
Keyword(s):  
Reaction Time ◽  
Chemical Reaction ◽  
Room Temperature ◽  
Specific Resistance ◽  
Relative Dielectric Constant ◽  
Si Substrate ◽  
Chain Reaction ◽  
Experimental Conditions ◽  
Excimer Lamp ◽  
Sio2 Thin Film

AbstractSiO2 insulator was fabricated by using Xe2* excimer lamp at room temperature. In this method, a mixrine of NF3 and O2 gases was employed as a reaction gas. When the NF3 and O2 gases were exposed to the Xe2* excimer lamp light NF3 and O2 gases inside the chamber where Si substrate was placed, SiFn and NO2 were produced by photo‐chemical reaction. The SiFn accumulates on the Si substrate, and SiO2 is formed by oxidation reaction between SiFn and NO2. Subsequently SiFn adheres onto the formed SiO2 and again oxidizes by NO2. These processes occur spontaneously, and on SiO2 film is grown. Experimental conditions were NF3:O2 = 10:1, the total gas pressure 330 torr, photo‐chemical reaction time 5 minutes, and chain reaction time 5 minutes. The results of the film characterization were a SiO2 film thickness of about 1500Å, a refractive index of 1.38, specific resistance of 1.67*1010 Ω cm and relative dielectric constant of 6.96.

Effect of Annealing Temperature on The Refrective Index and Dielectric Properties of TiO2/MnO2 CORE/SHELL Thin Films

2014 ◽  
Vol 6 (3) ◽  
pp. 1227-1232
Author(s):  
Peter Ekuma Agbo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Dielectric Properties ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Xrd Analysis ◽  
Core Shell ◽  
Structural Nature ◽  
Deposited Film

Thin film of the form TiO2/MnO2 was deposited using the chemical bath method. The deposited thin films were annealed at temperatures of in order to investigate the effect of annealing temperature on the refractive index and dielectric property. To do this the films were characterized using UV-Spectrophotometer and XRD analysis was also carriedout to study the structural nature of the deposited film. Our results reaveled that annealing has profound effect on theindex of refraction and the dielectric properties.  

Structural Properties of PbI2 Thin Film

2014 ◽  
Vol 879 ◽  
pp. 175-179 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Naser Mahmoud Ahmed ◽  
Y. Al-Douri ◽  
U. Hashim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Analysis ◽  
Film Thickness ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Lead Iodide ◽  
Thermal Evaporation Method ◽  
Growth Orientation

Lead iodide (PbI2) thin films were successfully prepared by thermal evaporation method on a glass substrate at room temperature. The structural analysis of these films was done by XRD. The results revealed that the crystallite size increases when increasing the film thickness and annealing temperature. In addition, the preferred growth orientation was 001 for all the samples.

High Spatial Resolution Tem Study of Thin Film Metal/6H-Sic Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
J. S. Bow ◽  
L. M. Porter ◽  
M. J. Kim ◽  
R. W. Carpenter ◽  
R. F. Davis
Keyword(s):  
Thin Film ◽  
Spatial Resolution ◽  
Reaction Zone ◽  
Room Temperature ◽  
Annealing Temperature ◽  
High Spatial Resolution ◽  
New Product ◽  
Amorphous Layer ◽  
Imaging And Spectroscopy ◽  
Two Phases

ABSTRACTThin films of titanium, platinum, and hafnium were deposited on single crystal n-type, (0001) 6H-SiC at room temperature in UHV. Microstructure and chemistry of their interfaces were analyzed by high spatial resolution TEM imaging and spectroscopy. Ti5Si3 and TiC were the two phases found in the reaction zone of Ti/SiC specimens annealed at 700°C. A carbon-containing amorphous layer formed between Pt and SiC when the annealing temperature went up to 750°C. There was no apparent reaction zone in Hf/SiC specimens annealed at 700°C for 60 min‥ The change of electrical properties of metal/6H-SiC devices was attributed to these new product phases.

DETERMINATION OF THE COMPLEX REFRACTIVE INDEX OF POROUS SILICON LAYERS ON CRYSTALLINE SILICON SUBSTRATES

2010 ◽  
Vol 24 (24) ◽  
pp. 4835-4850 ◽  
Author(s):  
M. C. ARENAS ◽  
HAILIN HU ◽  
R. NAVA ◽  
J. A. DEL RÍO
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Porous Silicon ◽  
Extinction Coefficient ◽  
Near Infrared ◽  
Crystalline Silicon ◽  
Complex Refractive Index ◽  
Si Substrate ◽  
Free Standing ◽  
Analytical Relations

In this work, we show an algorithm to calculate the complex refractive index of porous silicon (PS) on its crystalline silicon (c-Si) substrate in UV-NIR range by means of the reflectance spectra only. The algorithm is based on the analytical relations established by Heavens to obtain both complex refractive index and thickness of an absorbing thin film on an absorbing substrate. Based on this model, some simplification is introduced at different wavelengths. We start with the NIR range (1000–2500 nm), where the c-Si substrate has a low extinction coefficient. Then, we continue with the near infrared to the optical range (300–1000 nm), where PS has a strong extinction coefficient and dispersion. The calculated n and k values are in agreement with those reported in the literature obtained from separated measurements of a free standing PS film. We consider that the algorithm can be applied to any thin film on a substrate with similar optical properties.

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