Photoelectric Laser Stimulation applied to Latch-Up phenomenon and localization of parasitic transistors in an industrial failure analysis laboratory

2011 ◽  
Vol 51 (9-11) ◽  
pp. 1658-1661 ◽  
Author(s):  
R. Llido ◽  
J. Gomez ◽  
V. Goubier ◽  
N. Froidevaux ◽  
L. Dufayard ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Laser Stimulation ◽  
Analysis Laboratory ◽  
Latch Up

Photoelectric laser stimulation in a failure analysis laboratory

2004 ◽  
Author(s):  
A. Firiti ◽  
D. Lewis ◽  
F. Beaudoin ◽  
P. Perdu ◽  
G. Haller ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Laser Stimulation ◽  
Analysis Laboratory

Dual Port RAM MBIST Failure Analysis Using Time Resolved Dynamic Laser Stimulation

2008 ◽  
Author(s):  
Jonathan Shaw ◽  
Christopher McMahon ◽  
Yin Shyang Ng ◽  
Félix Beaudoi
Keyword(s):  
Failure Analysis ◽  
Embedded Memory ◽  
Complementary Information ◽  
Time Resolved ◽  
Laser Stimulation ◽  
Specific Indication ◽  
Read Operation ◽  
Site Localization

Abstract This paper presents the use of Dynamic Laser Stimulation (DLS) and Time-Resolved DLS (TR-DLS) to provide fail site localization and complementary information on a failed embedded memory IC. In this study, an embedded dual port RAM within a 90nm IC that failed one of the Memory Built-In Self Tests (MBISTs) was investigated. This technique rapidly localized the failing area within the memory read/write circuitry. The TR-DLS provided maps for each operation of the MBIST pattern. With this information, the failure was clearly identified as a read operation failure. The TR-DLS technique also provided much refined site signature (down to just one net) within the sense amp of the Port B of the dual port RAM. This information provided very specific indication on how to improve the operation of that particular sense amp circuitry within the dual port RAM Memory.

Yield and Failure Analysis of FinFET Source to Drain Leakage in 12nm Technology

2020 ◽  
Author(s):  
Felix Beaudoin ◽  
Satish Kodali ◽  
Rohan Deshpande ◽  
Wayne Zhao ◽  
Edmund Banghart ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Localization ◽  
Detailed Characterization ◽  
Laser Stimulation ◽  
Emission Microscopy ◽  
Scan Chain ◽  
Multiple Samples ◽  
Tem Lamella ◽  
Diffusion Activation

Abstract Fault localization using both dynamic laser stimulation and emission microscopy was used to localize the failing transistors within the failing scan chain latch on multiple samples. Nanoprobing was then performed and the source to drain leakage in N-type FinFETs was identified. After extensive detailed characterization, it was concluded that the N-type dopant signal was likely due to projections from the source/drain regions included in the TEM lamella. Datamining identified the scan chain fail to be occurring uniquely for a specific family of tools used during source/drain implant diffusion activation. This paper discusses the processes involved in yield delta datamining of FinFET and its advantages over failure characterization, fault localization, nanoprobing, and physical failure analysis.

Failure Analysis enhancement by evaluating the Photoelectric Laser Stimulation impact on mixed-mode ICs

2008 ◽  
Vol 48 (8-9) ◽  
pp. 1529-1532 ◽  
Author(s):  
M. Sienkiewicz ◽  
P. Perdu ◽  
A. Firiti ◽  
K. Sanchez ◽  
O. Crepel ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Mixed Mode ◽  
Laser Stimulation

Dynamic laser stimulation techniques for advanced failure analysis and design debug applications

2007 ◽  
Vol 47 (9-11) ◽  
pp. 1517-1522 ◽  
Author(s):  
F. Beaudoin ◽  
K. Sanchez ◽  
P. Perdu
Keyword(s):  
Failure Analysis ◽  
Laser Stimulation ◽  
Analysis And Design
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