Efficient and flexible Focused Ion Beam micromachining of Solid Immersion Lenses in various bulk semiconductor materials – An adaptive calibration algorithm

2014 ◽  
Vol 54 (9-10) ◽  
pp. 1794-1797 ◽  
Author(s):  
P. Scholz ◽  
N. Herfurth ◽  
M. Sadowski ◽  
T. Lundquist ◽  
U. Kerst ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Materials ◽  
Adaptive Calibration ◽  
Calibration Algorithm ◽  
Bulk Semiconductor

Focused Ion Beam: Advanced Technique for Device Modification

1994 ◽  
Vol 337 ◽  
Author(s):  
Marsha Abramo ◽  
Loren Hahn
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Materials ◽  
Advanced Technique ◽  
Aspect Ratios ◽  
Chip Technology ◽  
Design Changes ◽  
Critical Feedback

ABSTRACTFocused ion beam (FIB) technology is used to modify circuits for early-product design debug; it also has the capability to create probe points to underlying metallurgy, allowing device characterization while maintaining full functionality. These techniques provide critical feedback to designers for rapid verification of proposed design changes.Current FIB technology has its limitations because of redeposition of sputtered material; this phenomena may induce vertical electrical shorts and limit the achievable aspect ratio of a milled via to 6:1. Therefore, innovative enhancements are required to provide modification capability on planar chip technology which may utilize up to five levels of metallurgy. The ability to achieve high-aspect-ratio milling is required to access underlying circuitry. Vias with aspect ratios of 10:1 are necessary in some cases.This paper reviews a gas-assisted etching (GAE) process that enhances FIB milling by volatilizing the sputtered material, examines the results obtained from utilizing the GAE process for high-aspect-ratio milling, and discusses selectivity of semiconductor materials (silicon, aluminum, tungsten and silicon dioxide).

Further Inquiry into Xe Primary Ion Species for Circuit Edit Application

2017 ◽  
Author(s):  
Valery Ray ◽  
Ali Hadjikhani ◽  
Joseph Favata ◽  
Seyedeh Ahmadi ◽  
Sina Shahbazmohamadi
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Sources ◽  
Advanced Technology ◽  
Semiconductor Materials ◽  
Beam Current Density ◽  
Fundamental Limitations ◽  
Technology Nodes ◽  
Ion Species

Abstract Widespread adoption and significant developments in Focused Ion Beam technology has made FIB/SEM instrumentation a commonplace sample preparation tool. Fundamental limitations inherent to Ga ion species complicate usage of Ga+ FIB instruments for the modification of semiconductor devices on advanced technology nodes. Said limitations are fueling interest in exploring alternative primary species and ion beam technologies for circuit edit applications. Exploratory tests of etching typical semiconductor materials with Xe ion beams generated from two plasma ion sources confirmed advantages of Xe+ as a potential ion species for gas-assisted etching of semiconductor materials, but also revealed potential complications including, swelling of metal and Xe+ retention within the material arising from excessive Xe ion beam current density.

Focused Ion Beam Sample Preparation of Non-Semiconductor Materials

1997 ◽  
Vol 480 ◽  
Author(s):  
M. W. Phaneuf ◽  
N. Rowlands ◽  
G. J. C. Carpenter ◽  
G. Sundaram
Keyword(s):  
Cross Sections ◽  
Automobile Industry ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Semiconductor Materials ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Cross Sectional ◽  
Galvannealed Steel

AbstractFocused Ion Beam (FIB) systems have been steadily gaining acceptance as specimen preparation tools in the semiconductor industry. This is largely due to the fact that such instruments are relatively commonplace as failure analysis tools in semiconductor houses, and are commonly used in the preparation of cross-sections for imaging under the ion beam or using an electron beam in an SEM. Additionally, the ease with which cross-sectional TEM specimens of semiconductor devices can be prepared using FIB systems has been well demonstrated. However, this technology is largely unknown outside the semiconductor industry. Relatively few references exist in the literature on the preparation of cross-sectional TEM specimens of non-semiconductor materials by FIB. This paper discusses a specific use of FIB technology in the preparation of cross-sectional TEM specimens of non-semiconductor samples that are difficult to prepare by conventional means. One example of such materials is commercial galvannealed steel sheet that is used to form corrosion resistant auto-bodies for the automobile industry. Cross-sectional TEM specimens of this material have proved difficult and time-intensive to prepare by standard polishing and ion milling techniques due to galvanneal's inherent flaking and powdering difficulties, as well as the different sputtering rates of the various Fe-Zn intermetallic phases present in the galvannealed coatings. TEM results from cross-sectional samples of commercial galvannealed steel coatings prepared by conventional ion milling and FIB techniques are compared to assess image quality, the size of the electron-transparent thin regions that can be readily prepared and the quality of samples produced by both techniques. Specimen preparation times for both techniques are reported.

New Techniques for the Nanostructural Characterization of Semiconductor Materials and Devices Using Combined Focused Ion Beam and Transmission Electron Microscopy Techniques

1998 ◽  
Vol 523 ◽  
Author(s):  
R. Hull ◽  
D. Dunn
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Materials ◽  
Tomographic Image Reconstruction ◽  
Transmission Electron ◽  
Nanoscale Imaging ◽  
Imaging And Spectroscopy ◽  
Microscopy Techniques

AbstractWe describe novel techniques which extend the range of available nanostructural characterization capability for semiconductor materials and devices. These techniques combine high spatial resolution imaging and spectroscopy using transmission electron microscopy (TEM) and focused ion beam (FIB) microscopy. Specific capabilities described include nanoscale imaging of dopant distributions, ultra-high resolution secondary ion mass spectroscopy (SIMS) and tomographic image reconstruction.

Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method

2007 ◽  
Vol 515 (22) ◽  
pp. 8297-8300 ◽  
Author(s):  
Xingsheng Xu ◽  
Hongda Chen ◽  
Zhigang Xiong ◽  
Aizi Jin ◽  
Changzhi Gu ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Materials ◽  
Beam Method

Direct Formation of Fine Structure by Low Energy Focused Ion Beam

1996 ◽  
Vol 448 ◽  
Author(s):  
T. Chikyow ◽  
A. Shikanai ◽  
N. Koguchi
Keyword(s):  
Fine Structure ◽  
Kinetic Energy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Low Energy ◽  
Semiconductor Materials ◽  
Positive Bias ◽  
Direct Formation ◽  
Fine Structures

AbstractGaAs micro crystals in line were grown on a sulfur-terminated GaAs surface by low energy focused ion beam. Ga ions, picked out from a liquid Ga ion source, were accelerated up to 10 KV to obtain a focused ion beam. The ions were given a positive bias to reduce their kinetic energy by retarding lens.The Ga ions landed on the surface softly and formed a series of Ga droplets. By subsequent As molecule supply to the Ga droplet, GaAs micro crystals in line were grown. This method was found to be useful to make fine structures directly on the semiconductor materials.

Multi-Species Focused Ion Beam Processing for III-V Semiconductor Materials

2012 ◽  
Vol 18 (S2) ◽  
pp. 616-617
Author(s):  
B.P. Gila ◽  
B.R. Appleton ◽  
J. Fridmann ◽  
J.E. Sanabia ◽  
P. Mazarov
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Materials

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

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