Lateral profiling of gate dielectric damage by off-state stress and positive-bias temperature instability

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114383 ◽

2021 ◽

Vol 127 ◽

pp. 114383

Author(s):

Geon-Beom Lee ◽

Choong-Ki Kim ◽

Tewook Bang ◽

Min-Soo Yoo ◽

Yang-Kyu Choi

Keyword(s):

Gate Dielectric ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

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Positive bias temperature instability degradation of InGaAs n-MOSFETs with Al2O3 gate dielectric

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131621 ◽

2011 ◽

Author(s):

G. F. Jiao ◽

W. Cao ◽

Y. Xuan ◽

D. M. Huang ◽

P. D. Ye ◽

...

Keyword(s):

Gate Dielectric ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Positive-Bias Temperature Instability Improvement of Poly-Si Thin-Film Transistor With HfO2 Gate Dielectric by Ammonia Plasma Treatment

IEEE Transactions on Plasma Science ◽

10.1109/tps.2016.2602380 ◽

2016 ◽

Vol 44 (12) ◽

pp. 3153-3157

Author(s):

William Cheng-Yu Ma ◽

Zheng-Yi Lin ◽

Yao-Sheng Huang ◽

Bo-Siang Huang ◽

Zheng-Da Wu

Keyword(s):

Thin Film ◽

Plasma Treatment ◽

Gate Dielectric ◽

Thin Film Transistor ◽

Positive Bias ◽

Temperature Instability ◽

Ammonia Plasma ◽

Bias Temperature Instability ◽

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The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2928235 ◽

2008 ◽

Vol 92 (20) ◽

pp. 202901 ◽

Author(s):

De-Cheng Hsu ◽

Ingram Yin-ku Chang ◽

Ming-Tsong Wang ◽

Pi-Chun Juan ◽

Y. L. Wang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Improvement of positive bias temperature instability characteristic in GaN MOSFETs by control of impurity density in SiO2 gate dielectric

2017 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2017.8268490 ◽

2017 ◽

Author(s):

T. Yonehara ◽

Y. Kajiwara ◽

D. Kato ◽

K. Uesugi ◽

T. Shimizu ◽

...

Keyword(s):

Gate Dielectric ◽

Positive Bias ◽

Temperature Instability ◽

Impurity Density ◽

Bias Temperature Instability ◽

Instability Characteristic

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Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

2014 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2014.7061072 ◽

2014 ◽

Author(s):

Piyas Samanta ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

Chuan-Hsi Liu

Keyword(s):

Gate Dielectric ◽

Positive Bias ◽

Hafnium Silicate ◽

Temperature Instability ◽

Bias Temperature Instability

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The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.923524 ◽

2008 ◽

Vol 55 (7) ◽

pp. 1630-1638 ◽

Author(s):

Vrajesh D. Maheta ◽

Christopher Olsen ◽

Khaled Ahmed ◽

Souvik Mahapatra

Keyword(s):

Gate Dielectric ◽

Silicon Oxynitride ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

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A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2021.3078540 ◽

2021 ◽

pp. 1-1

Author(s):

Rui Gao ◽

Jigang Ma ◽

Xiaoling Lin ◽

Xiaowen Zhang ◽

Yunfei En ◽

...

Keyword(s):

Comparative Study ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796085 ◽

2008 ◽

Author(s):

D.P. Ioannou ◽

S. Mittl ◽

G. LaRosa

Keyword(s):

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

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Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

Microelectronics Reliability ◽

10.1016/j.microrel.2010.01.012 ◽

2010 ◽

Vol 50 (5) ◽

pp. 614-617 ◽

Author(s):

H.W. Chen ◽

C.H. Liu

Keyword(s):

Gate Dielectrics ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability

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Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors

IEEE Electron Device Letters ◽

10.1109/led.2021.3134902 ◽

2021 ◽

pp. 1-1

Author(s):

Yen-Pu Chen ◽

Mengwei Si ◽

Bikram Kishore Mahajan ◽

Zehao Lin ◽

Peide D. Ye ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Positive Bias ◽

Temperature Instability ◽

Hot Carrier ◽

Bias Temperature Instability ◽

Hot Carrier Degradation

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