New approach of Nano-Selective Area Growth (NSAG) for a precise control of GaN nanodots grown by MOVPE

2008 ◽  
Vol 147 (2-3) ◽  
pp. 114-117 ◽  
Author(s):  
J. Martin ◽  
A. Martinez ◽  
W.H. Goh ◽  
S. Gautier ◽  
N. Dupuis ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
New Approach ◽  
Precise Control ◽  
Selective Area ◽  
Area Growth

One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications

2009 ◽  
Vol 1228 ◽  
Author(s):  
Noelle Gogneau ◽  
Luc Le Gratiet ◽  
Richard Hostein ◽  
Bruno Fain ◽  
Ludovic Largeau ◽  
...  
Keyword(s):  
Single Photon ◽  
Vapour Phase ◽  
Active Species ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Precise Control ◽  
Inhibition Of Growth ◽  
Selective Area ◽  
Area Growth ◽  
One Step

AbstractWe demonstrate the feasibility of a new approach of Nano Selective Area Growth (Nano-SAG) to precisely localize InAs/InP QDs, by low-pressure Metalorganic Vapour Phase Epitaxy (MOVPE). This approach is based on a partial patterning with a dielectric mask containing nano-openings. The two main advantages of MOVPE are: the important diffusion length of the active species and the inhibition of growth on the dielectric mask. We demonstrate the synthesis of localized nanostructures with high structural properties and the precise control of their dimensions at the nanometer scale. This allows in principle the precise control of the tunability of the emission length.

scholarly journals Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth

Nanoscale ◽  
2020 ◽  
Vol 12 (46) ◽  
pp. 23780-23788
Author(s):  
Dmitrii V. Viazmitinov ◽  
Yury Berdnikov ◽  
Shima Kadkhodazadeh ◽  
Anna Dragunova ◽  
Nickolay Sibirev ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Monolithic Integration ◽  
Molten Alloy ◽  
Selective Area Growth ◽  
New Approach ◽  
Organic Vapor ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic ◽  
Silicon Based

We report a new approach for monolithic integration of III–V materials into silicon, based on selective area growth and driven by a molten alloy in metal–organic vapor phase epitaxy.

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

scholarly journals Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075013
Author(s):  
F. Meier ◽  
M. Protte ◽  
E. Baron ◽  
M. Feneberg ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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