Effect of low energy proton beam irradiation on structural and electrical properties of ZnO:Al thin films

4H-SiC has been irradiated with 10 keV protons and a laterally resolved DLTS study performed to study the diffusion of irradiation induced intrinsic point defects. It is found that the defects migrate on the order of hundreds of μm laterally and carbon interstitials (CI) are believed to be involved in the defect formation. However, the vertical diffusion lengths are revealed to be several orders of magnitude shorter, on the order of hundreds of nm. Specifically, the Z1,2, S1,2 and EH6,7 levels are found to be generated significant distances from the irradiated area, suggesting that CI or another highly mobile species are involved in the formation of these defects.

Download Full-text

Interface effect in pentacene field-effect transistors from high energy proton beam irradiation

Organic Electronics ◽

10.1016/j.orgel.2015.09.029 ◽

2015 ◽

Vol 27 ◽

pp. 240-246 ◽

Cited By ~ 5

Author(s):

Tae-Young Kim ◽

Jingon Jang ◽

Kyungjune Cho ◽

Younggul Song ◽

Woanseo Park ◽

...

Keyword(s):

Proton Beam ◽

Field Effect ◽

Field Effect Transistors ◽

High Energy ◽

Interface Effect ◽

Beam Irradiation ◽

High Energy Proton ◽

Proton Beam Irradiation ◽

Energy Proton

Download Full-text

Hypofractionated high-energy proton-beam irradiation is an alternative treatment for WHO grade I meningiomas

Acta Neurochirurgica ◽

10.1007/s00701-017-3352-4 ◽

2017 ◽

Vol 159 (12) ◽

pp. 2391-2400 ◽

Cited By ~ 11

Author(s):

Pavlos Vlachogiannis ◽

Olafur Gudjonsson ◽

Anders Montelius ◽

Erik Grusell ◽

Ulf Isacsson ◽

...

Keyword(s):

Proton Beam ◽

Alternative Treatment ◽

High Energy ◽

Beam Irradiation ◽

High Energy Proton ◽

Proton Beam Irradiation ◽

Who Grade ◽

Energy Proton

Download Full-text

Effects of proton beam irradiation on the physical and chemical properties of IGTO thin films with different thicknesses for thin-film transistor applications

Surfaces and Interfaces ◽

10.1016/j.surfin.2021.100990 ◽

2021 ◽

Vol 23 ◽

pp. 100990

Author(s):

Min-Gyu Shin ◽

Seong-Hyun Hwang ◽

Hyun-Seok Cha ◽

Hwan-Seok Jeong ◽

Dae-Hwan Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Proton Beam ◽

Thin Film Transistor ◽

Chemical Properties ◽

Physical And Chemical Properties ◽

Beam Irradiation ◽

Proton Beam Irradiation ◽

Physical And Chemical ◽

And Chemical Properties

Download Full-text

EFFECT OF LOW-ENERGY OXYGEN ION BEAM TREATMENT ON THE STRUCTURAL AND PHYSICAL PROPERTIES OF ZnO THIN FILMS

Surface Review and Letters ◽

10.1142/s0218625x20500195 ◽

2020 ◽

Vol 27 (12) ◽

pp. 2050019 ◽

Cited By ~ 2

Author(s):

A. ABDEL-GALIL ◽

A. ATTA ◽

M. R. BALBOUL

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Ion Irradiation ◽

Ion Beam ◽

Low Energy ◽

Zno Thin Films ◽

Zno Films ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

Oxygen Ion

In this paper, we report the influence of low-energy oxygen ion irradiation with fluence ranging from [Formula: see text][Formula: see text][Formula: see text] to [Formula: see text][Formula: see text][Formula: see text] on the structural, optical, and electrical properties of fresh and annealed (400∘C, 3[Formula: see text]h) zinc oxide (ZnO) thin films. These films were grown on soda-lime glass (SLG) substrates using the spin-coating method as a low-cost depositing technique. X-ray diffraction (XRD) study showed the formation of the hexagonal phase of ZnO thin films with preferred orientation along the (002) plane. The crystallite size for fresh and annealed ZnO thin films was in nanoscale and it increased with the annealing temperature. Also, the crystallite size increased with the ion beam irradiation fluence in the case of annealed ZnO films, while it slightly decreased for the fresh ZnO films. The transmittance and absorbance spectra for the ZnO films were investigated in a wide wavelength range. The optical bandgap was specified by using Tauc’s relation. The electrical properties of the ZnO films (fresh and annealed at 400∘C for 3[Formula: see text]h) were studied before and after the oxygen ion beam irradiation. Also, the dielectric properties were investigated with respect to frequency at different ion beam irradiation fluences. The comprehensive results showed the dielectric and optical properties are improved due to the induced conductive networks by oxygen ion irradiation.

Download Full-text