Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE

2021 ◽  
Vol 132 ◽  
pp. 105909
Author(s):  
I. Daldoul ◽  
S. Othmani ◽  
A. Mballo ◽  
P. Vuong ◽  
J.P. Salvestrini ◽  
...  
Keyword(s):  
Cubic Gan

Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

2011 ◽  
Vol 1396 ◽  
Author(s):  
Suzuka Nishimura ◽  
Muneyuki Hirai ◽  
Kazutaka Terashima
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Cubic Gan ◽  
Gan On Si

ABSTRACTWe have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide (BP) buffer crystals. The growth of GaN was carried out by MOVPE on BP/Si(100) substrate of 2 inches in diameter. By the several evaluations, it was recognized that when the growth temperature is around 750˚C, c-GaN was dominant. The typical growth rate was about 0.5μm/h. We obtained c-GaN layer over 2.5μm thick without cracking.

Growth and Characterization of a Cubic GaN p-n Light Emitting Diode on GaAs (001) Substrates

2000 ◽  
Vol 180 (1) ◽  
pp. 369-374 ◽  
Author(s):  
D.J. As ◽  
A. Richter ◽  
J. Busch ◽  
M. L�bbers ◽  
J. Mimkes ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Cubic Gan

Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates

1989 ◽  
Vol 162 ◽  
Author(s):  
T. P. Humphreys ◽  
C. A. Sukow ◽  
R. J. Nemanich ◽  
J. B. Posthill ◽  
R. A. Rudder ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Epitaxial Films ◽  
Optical And Electrical Properties ◽  
Spectroscopy Data ◽  
Sapphire Substrates ◽  
Cubic Gan ◽  
First Time

ABSTRACTEpitaxial GaN films have been grown by plasma-enhanced chemical vapor deposition (PECVD). The growth procedure utilizes a He gas discharge combined with the down-stream introduction of trimethylgallium (TMGa) and nitrogen. Both cubic [1111 and wurtzitic [0001] GaN epitaxial films have been achieved on (0001) sapphire substrates. Differences in substrate growth temperatures are believed to account for the different observed phases. A comparative study pertaining to the microstructural, optical and electrical properties of the α-GaN and β-GaN heteroepitaxial films is presented. Also reported for the first time is the Raman spectroscopy data for cubic GaN.

Growth and characterization of cubic GaN

1997 ◽  
Vol 178 (1-2) ◽  
pp. 113-133 ◽  
Author(s):  
H. Okumura ◽  
K. Ohta ◽  
G. Feuillet ◽  
K. Balakrishnan ◽  
S. Chichibu ◽  
...  
Keyword(s):  
Cubic Gan

Growth mechanism and structural characterization of hexagonal GaN films grown on cubic GaN (111)/GaAs (111)B substrates by MOVPE

2005 ◽  
Vol 275 (1-2) ◽  
pp. e1023-e1027 ◽  
Author(s):  
Sakuntam Sanorpim ◽  
Ryuji Katayama ◽  
Kajornyod Yoodee ◽  
Kentaro Onabe
Keyword(s):  
Growth Mechanism ◽  
Structural Characterization ◽  
Cubic Gan
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