Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates
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ABSTRACTEpitaxial GaN films have been grown by plasma-enhanced chemical vapor deposition (PECVD). The growth procedure utilizes a He gas discharge combined with the down-stream introduction of trimethylgallium (TMGa) and nitrogen. Both cubic [1111 and wurtzitic [0001] GaN epitaxial films have been achieved on (0001) sapphire substrates. Differences in substrate growth temperatures are believed to account for the different observed phases. A comparative study pertaining to the microstructural, optical and electrical properties of the α-GaN and β-GaN heteroepitaxial films is presented. Also reported for the first time is the Raman spectroscopy data for cubic GaN.
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2019 ◽
Vol 217
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pp. 1900597
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2007 ◽
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pp. 794-797
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pp. 1184-1189
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2004 ◽
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