Growth and characterization of a p-n junction diode made of cubic GaN

ABSTRACTWe have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide (BP) buffer crystals. The growth of GaN was carried out by MOVPE on BP/Si(100) substrate of 2 inches in diameter. By the several evaluations, it was recognized that when the growth temperature is around 750˚C, c-GaN was dominant. The typical growth rate was about 0.5μm/h. We obtained c-GaN layer over 2.5μm thick without cracking.

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Effect of post-growth annealing on the structural, optical and electrical properties of V 2 O 5 nanorods and its fabrication, characterization of V 2 O 5 /p-Si junction diode

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2015.08.020 ◽

2016 ◽

Vol 41 ◽

pp. 497-507 ◽

Cited By ~ 37

Author(s):

N. Senthil kumar ◽

M. Sethu Raman ◽

J. Chandrasekaran ◽

R. Priya ◽

Murthy Chavali ◽

...

Keyword(s):

Electrical Properties ◽

Optical And Electrical Properties ◽

Junction Diode

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Growth and Characterization of a Cubic GaN p-n Light Emitting Diode on GaAs (001) Substrates

phys stat sol (a) ◽

10.1002/1521-396x(200007)180:1<369::aid-pssa369>3.0.co;2-3 ◽

2000 ◽

Vol 180 (1) ◽

pp. 369-374 ◽

Cited By ~ 1

Author(s):

D.J. As ◽

A. Richter ◽

J. Busch ◽

M. L�bbers ◽

J. Mimkes ◽

...

Keyword(s):

Light Emitting Diode ◽

Light Emitting ◽

Cubic Gan

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Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-162-531 ◽

1989 ◽

Vol 162 ◽

Cited By ~ 21

Author(s):

T. P. Humphreys ◽

C. A. Sukow ◽

R. J. Nemanich ◽

J. B. Posthill ◽

R. A. Rudder ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Optical Characterization ◽

Epitaxial Films ◽

Optical And Electrical Properties ◽

Spectroscopy Data ◽

Sapphire Substrates ◽

Cubic Gan ◽

First Time

ABSTRACTEpitaxial GaN films have been grown by plasma-enhanced chemical vapor deposition (PECVD). The growth procedure utilizes a He gas discharge combined with the down-stream introduction of trimethylgallium (TMGa) and nitrogen. Both cubic [1111 and wurtzitic [0001] GaN epitaxial films have been achieved on (0001) sapphire substrates. Differences in substrate growth temperatures are believed to account for the different observed phases. A comparative study pertaining to the microstructural, optical and electrical properties of the α-GaN and β-GaN heteroepitaxial films is presented. Also reported for the first time is the Raman spectroscopy data for cubic GaN.

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