Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

2011 ◽  
Vol 1396 ◽  
Author(s):  
Suzuka Nishimura ◽  
Muneyuki Hirai ◽  
Kazutaka Terashima
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Cubic Gan ◽  
Gan On Si

ABSTRACTWe have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide (BP) buffer crystals. The growth of GaN was carried out by MOVPE on BP/Si(100) substrate of 2 inches in diameter. By the several evaluations, it was recognized that when the growth temperature is around 750˚C, c-GaN was dominant. The typical growth rate was about 0.5μm/h. We obtained c-GaN layer over 2.5μm thick without cracking.

Epitaxial Growth of 4H-SiС Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method

2012 ◽  
Vol 717-720 ◽  
pp. 97-100
Author(s):  
Hyun Seung Lee ◽  
Min Jae Kim ◽  
Min Hee Kim ◽  
Sang Il Lee ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Growth Temperature ◽  
Atmospheric Pressure ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Cvd Method

The chlorinated precursor is recently focused for high growth rate and high quality epitaxial layer. In the previous studies, the addition of chlorinated species from Si2Cl6 in the gas phase eliminated simultaneous Si nucleation which interferes with epitaxy. In this work, the characterization of epitaxial layers grown with chlorinated species is focused. High growth rate of 30 μm/h was achieved by using Si2(CH3)6 and Si2Cl6 as chlorinated precursors. We concluded that high growth rate was achieved by using HMDS and HCDS as the precursor of SiC at growth temperature of 1600 °C.

Growth and Characterization of GaN on Si(111)

1994 ◽  
Vol 339 ◽  
Author(s):  
A. Ohtani ◽  
K. S. Stevens ◽  
R. Beresford
Keyword(s):  
Growth Temperature ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Ion Density ◽  
Nitrogen Ion ◽  
Gan On Si ◽  
Aln Buffer

ABSTRACTWurtzite GaN films on AlN buffer layers were grown on Si (111) by electron cyclotron resonance microwave plasma assisted MBE (ECR-MBE). High resolution x-ray diffraction studies indicate that the mosaic disorder decreases with increasing growth temperature. The grain size is related to the growth temperature. The best (0002) diffraction peak full width at half maximum was 22 min. for a film 1.7 μm thick. Prominent exciton luminescence is observed at 3.46 eV at 10 K.The plasma I-V characteristics were measured with a Langmuir probe near the growth position. The nitrogen ion density has been extracted from the data, and is a strong function of the N2 flow rate, the microwave power and the aperture size of the ECR source. The crystal quality of AlN is strongly affected by the plasma conditions.

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

2019 ◽  
Vol 954 ◽  
pp. 31-34
Author(s):  
Guo Guo Yan ◽  
Xing Fang Liu ◽  
Feng Zhang ◽  
Zhan Wei Shen ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth ◽  
Influence Mechanism

Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH4-C2H4-H2-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology and growth rate was studied. It is found that the steps in the epilayer become more clear with the increasing temperatures. The result indicates that the C/Si ratio window of on-axis epitaxial growth is very narrow. Only when the C/Si ratio was 1.2, a slightly improved surface morphology can be achieved. The results indicate that 4H-SiC epitaxial layers were obtained on on-axis substrates and the films were highly-oriented 4H-SiC.

The Effect of Substrate Annealing on Epitaxial Growth in Mbe—Grown Silicon on Sapphire.

1988 ◽  
Vol 116 ◽  
Author(s):  
Joseph G. Pellegrino ◽  
Eliezer D. Richmond ◽  
Mark F. Twigg
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Temperature And Growth ◽  
Identical Series ◽  
Substrate Annealing ◽  
Deposition Substrate ◽  
Anneal Time

We have continued our investigation1 of the effects of pre—deposition substrate annealing for the case of MBE grown silicon on sapphire. Three identical series of samples were grown with film thicknesses ranging between 65 and 1500 angstroms. Each series of samples was grown upon sapphire which had been annealed at either 1450ºC, 1300ºC, or 900ºC. The growth temperature and growth rate were the same for each series. The anneal time for each sample was 30 minutes.

scholarly journals Theory and experiments of liquid phase epitaxial growth Part 1

2018 ◽  
Vol 39 (1) ◽  
pp. 1-22 ◽  
Author(s):  
Nikolay S. Peev
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Epitaxial Growth ◽  
Normal Growth ◽  
Initial Growth ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth ◽  
Theory And Experiments

Abstract Characterization of the liquid phase epitaxial growth is in the scope of the present paper. The determination of the main parameters of the process such as the stationary growth rate, the time constant, the stationary supercooling, the kinetic coefficient, the initial growth rate, the crystallization mechanism are under consideration. Pursuing this aim a differential equation has been obtained which allows obtaining the dependences of the supersaturation, the growth rate and the growth layer thickness on the duration of growth. These dependences allow the determination of the above mentioned process parameters. Two mechanisms of crystallization are considered - the normal growth and the growth assisted by the screw dislocations. The two dimensional nuclei growth has not been considered because an analytical solution of the equation was not possible. Some of the theoretical contentions are confirmed by the experiments. Using the obtained values of the parameters dependences are defined. Good agreement between theory and experimental results is observed.

Quality and Growth Rate of Hot-wire Chemical Vapor Deposition Epitaxial Si Layers

2008 ◽  
Vol 1066 ◽  
Author(s):  
Charles W Teplin ◽  
Ina T. Martin ◽  
Kim M. Jones ◽  
David Young ◽  
Manuel J. Romero ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Growth Phase ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
High Carrier ◽  
Substrate Temperatures

ABSTRACTFast epitaxial growth of several microns thick Si at glass-compatible temperatures by the hot-wire CVD technique is investigated, for film Si photovoltaic and other applications. Growth temperature determines the growth phase (epitaxial or disordered) and affects the growth rate, possibly due to the different hydrogen coverage. Stable epitaxy proceeds robustly in several different growth chemistry regimes at substrate temperatures above 600°C. The resulting films exhibit low defect concentrations and high carrier mobilities.

The Relationship between Surface Pits Density and Growth Parameters during the Epitaxial Growth of 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 229-232 ◽  
Author(s):  
Wei Yu Chen ◽  
Han Chieh Ho ◽  
Po Fei Yang ◽  
Liang Choo Hsia
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Parameters ◽  
Lower Surface ◽  
Ratio Condition ◽  
Background Doping ◽  
Good Uniformity ◽  
Temperature And Growth ◽  
The Relationship

In this study, different parameters of 4H-SiC epitaxial growth were used to investigate the influence on surface pits density. It was found that the density of surface pits can be reduced significantly at lower C/Si ratio condition but doping uniformity became worse simultaneously. The background doping was higher than 2E15 cm-3 when C/Si ratio was lower than 1.0. Influences of growth temperature and growth rate are also discussed. The lower surface pits density 4H-SiC epilayer with good uniformity (s/mean below 2%) can be realized during optimal condition.

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

scholarly journals Epitaxial growth and characterization of Cu thin films deposited on Al2O3(0001) substrates by magnetron sputtering

2021 ◽  
pp. 130119
Author(s):  
Ik-Jae Lee ◽  
Hee Seob Kim ◽  
Young Duck Yun ◽  
Seen-Woong Kang ◽  
Hyo-Yun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Epitaxial Growth
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