Growth and properties of the GaN cap layer strongly influenced by the composition of the underlying AlGaN

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

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Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs

2021 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps46558.2021.9405111 ◽

2021 ◽

Author(s):

F. Chiocchetta ◽

C. Calascione ◽

C. De Santi ◽

C. Sharma ◽

F. Rampazzo ◽

...

Keyword(s):

Cap Layer

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Carbon film growth on model electron-irradiated MLM cap layer: interaction of benzene and MMA vapor with TiO 2 surface

10.1117/12.814385 ◽

2009 ◽

Author(s):

B. V. Yakshinskiy ◽

S. Zalkind ◽

R. A. Bartynski ◽

R. Caudillo ◽

T. E. Madey

Keyword(s):

Film Growth ◽

Carbon Film ◽

Layer Interaction ◽

Cap Layer

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Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

IEEE Electron Device Letters ◽

10.1109/led.2004.840395 ◽

2005 ◽

Vol 26 (1) ◽

pp. 5-7 ◽

Cited By ~ 31

Author(s):

Wen-Kai Wang ◽

Po-Chen Lin ◽

Ching-Huao Lin ◽

Cheng-Kuo Lin ◽

Yi-Jen Chan ◽

...

Keyword(s):

Performance Enhancement ◽

Gan Hemt ◽

Cap Layer ◽

Gate Recess

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Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

MRS Proceedings ◽

10.1557/proc-692-h1.1.1 ◽

2001 ◽

Vol 692 ◽

Author(s):

J. Zhao ◽

X. D. Zhang ◽

Z. C. Feng ◽

J. C. Deng ◽

P. Jin ◽

...

Keyword(s):

Quantum Wells ◽

Band Gap ◽

Annealing Temperature ◽

Multiple Quantum Well ◽

Blue Shift ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Cladding Layer ◽

Cap Layer ◽

Free Vacancy

AbstractInGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. Si3N4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal anne aling (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

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