Ammonia-induced surface microstructure reconstruction on ACIGS thin film at room temperature

2022 ◽  
Vol 140 ◽  
pp. 106380
Author(s):  
Yunxiang Zhang ◽  
Yongheng Zhang ◽  
Xiao Chen ◽  
Sijia Wang ◽  
Qing Gao ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Surface Microstructure ◽  
Microstructure Reconstruction

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Warm and freeze-fracture of cotton seed radicles

1987 ◽  
Vol 45 ◽  
pp. 984-985
Author(s):  
E. L. Vigil ◽  
E. F. Erbe
Keyword(s):  
Thin Film ◽  
Water Vapor ◽  
Fracture Surface ◽  
Membrane Structure ◽  
Room Temperature ◽  
Freeze Fracture ◽  
Longitudinal Axis ◽  
Fracture Plane ◽  
Cotton Seeds ◽  
Condensed Water

In cotton seeds the radicle has 12% moisture content which makes it possible to prepare freeze-fracture replicas without fixation or cryoprotection. For this study we have examined replicas of unfixed radicle tissue fractured at room temperature to obtain data on organelle and membrane structure.Excised radicles from seeds of cotton (Gossyplum hirsutum L. M-8) were fractured at room temperature along the longitudinal axis. The fracture was initiated by spliting the basal end of the excised radicle with a razor. This procedure produced a fracture through the tissue along an unknown fracture plane. The warm fractured radicle halves were placed on a thin film of 100% glycerol on a flat brass cap with fracture surface up. The cap was rapidly plunged into liquid nitrogen and transferred to a freeze- etch unit. The sample was etched for 3 min at -95°C to remove any condensed water vapor and then cooled to -150°C for platinum/carbon evaporation.

Surface Microstructure Evolution Upon Silicidation of Ni(Pt) and the Different Responses to Metal Etch

2013 ◽  
Author(s):  
Wentao Qin ◽  
Dorai Iyer ◽  
Jim Morgan ◽  
Carroll Casteel ◽  
Robert Watkins ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxide Film ◽  
Microstructure Evolution ◽  
Depth Profiling ◽  
Surface Microstructure ◽  
The Difference ◽  
Surface Microstructures ◽  
Pt Films

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.

Ternary CuO:SnO2:ZnO (1:1:1) composite thin film for room temperature gas sensor application

Optik ◽  
2021 ◽  
Vol 234 ◽  
pp. 166615
Author(s):  
S.R. Cynthia ◽  
R. Sivakumar ◽  
C. Sanjeeviraja
Keyword(s):  
Thin Film ◽  
Gas Sensor ◽  
Room Temperature ◽  
Composite Thin Film ◽  
Sensor Application

Pseudo n-type behaviour of nickel oxide thin film at room temperature towards ammonia sensing

2021 ◽  
Author(s):  
Kumar Haunsbhavi ◽  
Karuppiah Deva Arun Kumar ◽  
Paolo Mele ◽  
Omar M. Aldossary ◽  
Mohd Ubaidullah ◽  
...  
Keyword(s):  
Thin Film ◽  
Nickel Oxide ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Ammonia Sensing ◽  
Nickel Oxide Thin Film

Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

2021 ◽  
Vol 13 (2) ◽  
pp. 3445-3453
Author(s):  
Wei Huang ◽  
Xinge Yu ◽  
Li Zeng ◽  
Binghao Wang ◽  
Atsuro Takai ◽  
...  
Keyword(s):  
Thin Film ◽  
Ultraviolet Light ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Self Assembled

scholarly journals Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel

RSC Advances ◽  
2021 ◽  
Vol 11 (29) ◽  
pp. 17910-17913
Author(s):  
Liuhui Lei ◽  
Yuanyuan Tan ◽  
Xing Yuan ◽  
Wei Dou ◽  
Jiale Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Layer Thin Film

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature.

Fast-Response X-ray Detector Based on Nanocrystalline Ga2O3 Thin Film Prepared at Room Temperature

2021 ◽  
pp. 149619
Author(s):  
Manni Chen ◽  
Zhipeng Zhang ◽  
Runze Zhan ◽  
Juncong She ◽  
Shaozhi Deng ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Fast Response ◽  
X Ray ◽  
Ga2o3 Thin Film

Effects of Drying Temperature on Surface Morphology and Electric Behavior of IGZO Thin Film Prepared by Solution Process

2015 ◽  
Vol 1731 ◽  
Author(s):  
Nobuko Fukuda ◽  
Shintaro Ogura ◽  
Koji Abe ◽  
Hirobumi Ushijima
Keyword(s):  
Thin Film ◽  
Organic Solvents ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Precursor Solution ◽  
Drying Process ◽  
Minor Variation ◽  
Drying Temperature ◽  
Metal Nitrates

ABSTRACTWe have achieved a drastic improvement of the performance as thin film transistor (TFT) for solution-processed IGZO thin film by controlling drying temperature of solvents containing the precursor solution. The IGZO-precursor solution was prepared by mixing of metal nitrates and two kinds of organic solvents, 2-methoxyethanol (2ME) and 2,2,2-trifluoroethanol (TFE). 2ME was used for dissolving metal nitrates. TFE was added as a solvent for reducing surface tension as small as possible, leading to improvement of the wettability of the precursor solution on the surface of the substrate. In order to discuss the relationship between morphology and drying process, the spin-coated IGZO-precursor films were dried at room temperature and 140 °C on a hotplate, respectively. Annealing of the both films was carried out at 300 °C in an electric oven for 60 min after each drying process. Drying at room temperature provides a discontinuous film, resulting in a large variation of the TFT performance. On the other hand, drying at 140 °C provides a continuous film, resulting in the higher TFT performance and a minor variation. The difference in surface morphologies would be derived from the evaporation rate of the organic solvents. The rapid evaporation at 140 °C brings about rapid pinning of the spin-coated precursor layer on the substrate. Preparation process via the drying at 140 °C gave ∼ 1 cm2 V-1 s-1 of the saturated mobility, quite small hysteresis, and 107∼ 108 of the on-off ratio.

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Chemical Transformation ◽  
Room Temperature ◽  
Film Formation ◽  
Synthetic Method ◽  
Binder Free ◽  
Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

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