Fast-Response X-ray Detector Based on Nanocrystalline Ga2O3 Thin Film Prepared at Room Temperature

2021 ◽  
pp. 149619
Author(s):  
Manni Chen ◽  
Zhipeng Zhang ◽  
Runze Zhan ◽  
Juncong She ◽  
Shaozhi Deng ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Fast Response ◽  
X Ray ◽  
Ga2o3 Thin Film

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

Formation of ZnO Doped with Mn Thin Film by Electrodeposition and Magnetic Behaviour.

2005 ◽  
Vol 879 ◽  
Author(s):  
M. Abid ◽  
C. Terrier ◽  
J-P Ansermet ◽  
K. Hjort
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Magnetic Behaviour ◽  
Spectroscopic Methods ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Mn Doped ◽  
Weak Ferromagnetic

AbstractFollowing the theory, ferromagnetism is predicted in Mn- doped ZnO, Indeed, ferromagnetism above room temperature was recently reported in thin films as well as in bulk samples made of this material. Here, we have prepared Mn doped ZnO by electrodeposition. The samples have been characterized by X-ray diffraction and spectroscopic methods to ensure that the dopants are substitutional. Some samples exhibit weak ferromagnetic properties at room temperature, however to be useful for spintronics this material need additional carriers provided by others means.

Superconducting Properties of Amorphous Multilayer Metal-Semiconductor Composites

1984 ◽  
Vol 37 ◽  
Author(s):  
A. M. Kadin ◽  
R. W. Burkhardt ◽  
J. T. Chen ◽  
J. E. Keem ◽  
S. R. Ovshinsky
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Electrical Transport ◽  
Room Temperature ◽  
Superconducting Properties ◽  
X Ray ◽  
Critical Magnetic Fields ◽  
X Ray Scattering ◽  
Interface Profile ◽  
Multilayer Metal

AbstractFollowing the earlier multilayer work of Ovshinsky and colleagues, we have fabricated thin-film samples consisting of alternating periodic layers of a transition metal (Nb, Mo, W) and a semiconducting element (Si, Ge, C) by sequential sputtering from two targets onto room-temperature substrates. The regular repeat spacing has been varied from 10 Å to more than 100 Å, with as many as several hundred layer pairs. Crystalline epitaxy was not required or even desired; many samples were largely amorphous as determined from x-ray scattering. Electrical transport measurements of superconducting properties have been carried out parallel to the layers. Samples exhibited highly anisotropic superconducting critical magnetic fields, with some values in excess of 200kG parallel to the layers. Evidence suggesting an asymmetric interface profile will be presented.

Dielectric properties of Ln(Mg1/2Ti1/2)O3 as substrates for high-Tc superconductor thin films

1999 ◽  
Vol 14 (6) ◽  
pp. 2484-2487 ◽  
Author(s):  
Seo-Yong Cho ◽  
Chang-Hun Kim ◽  
Dong-Wan Kim ◽  
Kug Sun Hong ◽  
Jong-Hee Kim
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Room Temperature ◽  
Ybco Thin Film ◽  
X Ray Diffraction ◽  
High Tc ◽  
X Ray ◽  
High Tc Superconductor ◽  
Tan Δ ◽  
Superconductor Thin Films

Ln(Mg1/2Ti1/2)O3 (Ln = Dy, La, Nd, Pr, Sm, Y) compositions have been prepared, and their pertinent properties for use as thin film substrates for YBa2Cu3Ox (YBCO) were measured. X-ray diffraction shows that Ln(Mg1/2Ti1/2)O3 compositions have noncubic symmetry and the GdFeO3-type structure. Dielectric constant measurements revealed values between 22 and 27, which are larger than those of the LnAlO3 family. Quality factor (=1/ tan δ) of the ceramic specimens measured at room temperature was larger than 3000 at 10 GHz. Among the compounds, La(Mg1/2Ti1/2)O3 exhibited the highest dielectric constant and the lowest dielectric loss. Chemical reaction was observed between Ln(Mg1/2Ti1/2)O3 (Ln = Dy, Sm, Y) and YBCO after annealing a 1 : 1 mixture at 950 °C. Considering dielectric and physical properties, La(Mg1/2Ti1/2)O3 and Sm(Mg1/2Ti1/2)O3 were determined to be suitable substrates for YBCO thin film used in microwave applications.

Cold Cathode X-Ray Flat Panel Detector Based on Ga2O3 Thin Film Photoconductor

2021 ◽  
Author(s):  
Haojian Huang ◽  
Manni Chen ◽  
Zhipeng Zhang ◽  
Juncong She ◽  
Shaozhi Deng ◽  
...  
Keyword(s):  
Thin Film ◽  
Cold Cathode ◽  
Flat Panel ◽  
X Ray ◽  
Flat Panel Detector ◽  
Ga2o3 Thin Film

Fast response thin film SnO2 gas sensors operating at room temperature

2006 ◽  
Vol 119 (2) ◽  
pp. 380-383 ◽  
Author(s):  
H.C. Wang ◽  
Y. Li ◽  
M.J. Yang
Keyword(s):  
Thin Film ◽  
Gas Sensors ◽  
Room Temperature ◽  
Fast Response

scholarly journals Determining Contact Angle and Surface Energy of Co60Fe20B20Thin Films by Magnetron Sputtering

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
S. K. Wang ◽  
Yuan-Tsung Chen ◽  
S. R. Jian
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Contact Angle ◽  
Surface Energy ◽  
Room Temperature ◽  
Annealing Treatment ◽  
Test Liquid ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing

This study examined the deposition of CoFeB thin films on a glass substrate at room temperature (RT), as well as the effects of conducting postannealing at heat annealingTA=150°C for 1 h. The thickness (tf) of the CoFeB thin films ranged from 100 Å to 500 Å. The microstructure, average contact angle, and surface energy properties were also investigated. X-ray diffraction (XRD) revealed that CoFeB films are nanocrystalline at RT and that post-annealing treatment increases in conjunction with the crystallinity. The surface energy of the CoFeB thin films is related to adhesive strength. The CoFeB films form a contact angle of larger than90∘with water as a test liquid. This finding demonstrates that the CoFeB film is hydrophobic. Astfincreases from 100 Å to 500 Å, the surface energy at RT decreases from 40 mJ/mm2to 32 mJ/mm2. During post-annealing treatment, the surface energy increases from 32 mJ/mm2to 35 mJ/mm2, astfincreases from 100 Å to 300 Å; then it decreases to 31 mJ/mm2, astfincreases from 300 Å to 500 Å. The surface energy of the as-deposited CoFeB thin films exceeds that during post-annealing treatment at thicknesses of 100 Å and 200 Å, suggesting that as-deposited CoFeB thin film increases the adhesion.

Formation of Metal Nitrides by Nitrogen Implantation

1985 ◽  
Vol 54 ◽  
Author(s):  
En Ma ◽  
Bai-Xin Liu ◽  
Xin Chen ◽  
Heng-De Li
Keyword(s):  
Thin Film ◽  
Systematic Study ◽  
Room Temperature ◽  
Bulk Material ◽  
Ion Beam ◽  
Phase Identification ◽  
Metal Nitrides ◽  
Nitrogen Implantation ◽  
X Ray ◽  
Nitride Formation

ABSTRACTA systematic study was performed to investigate the ion beam induced metal nitride formation by direct nitrogen implantation into 10 selected metals, either of thin film or bulk material. An X-ray diffractometer, together with a specially-designed Seemann-Bohlin attachment, was employed to provide fast and reliable phase identification in the thin implanted layer. The results show that room temperature nitrogen implantation can lead to the formation of many, but not all, of the equilibrium metal nitrides. The formation of metal nitrides by implantation is discussed in terms of the thermodynamic condition and the readiness of structural trans format ion.

Sign in / Sign up

Export Citation Format

Share Document