A quantitative stress-related model for the evolution of the pore size in porous silicon during high temperature annealing
2006 ◽
Vol 253
(1-2)
◽
pp. 269-273
◽
Keyword(s):
Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing
1989 ◽
Vol 47
◽
pp. 604-605
2003 ◽
Vol 386
◽
pp. 358-362
◽
1970 ◽
Vol 32
(6)
◽
pp. 1791-1797
2020 ◽
Vol 217
(14)
◽
pp. 1900868
◽
Keyword(s):